Patent classifications
H05K2203/0713
Component Carrier With Partially Metallized Hole Using Anti-Plating Dielectric Structure and Electroless Plateable Separation Barriers
A component carrier includes a stack with at least one electrically conductive layer structure, at least one electrically insulating layer structure, and a hole in the stack having a first hole portion covered with metal and having a second hole portion not covered with metal, wherein the second hole portion is defined by an anti-plating dielectric structure and an electroless plateable separation barrier.
Method for manufacturing wiring board
A method for manufacturing a wiring board is capable of forming a metal layer included in a wiring layer to have an even thickness. The method includes preparing a conductive first underlayer on a surface of a substrate; a conductive second underlayer on a surface of the first underlayer; and a seed layer on a surface of the second underlayer and containing metal. The method disposes a solid electrolyte membrane between an anode and the seed layer as a cathode; applies voltage between the anode and the first underlayer to form a metal layer on the surface of the seed layer; removes an exposed portion of the second underlayer without the seed layer from the substrate; and removes an exposed portion of the first underlayer without the seed layer from the substrate. The first underlayer is a material having a higher electrical conductivity than that of the second underlayer.
Method for manufacturing wiring board, and wiring board
Provided is a method for manufacturing a wiring board that forms a wiring layer having favorable adhesion without a resin resist pattern. A method prepares a substrate with seed-layer including: a underlayer on the surface of an insulating substrate; and a seed layer on the surface of the underlayer, the seed layer having a predetermined pattern and containing metal; presses a solid electrolyte membrane against the seed layer and the underlayer, and applies voltage between an anode and the underlayer to reduce metal ions in the membrane and form a metal layer on the surface of the seed layer; and removes an exposed region without the seed layer and the metal layer of the underlayer to form a wiring layer including the underlayer, the seed layer and the metal layer on the surface of the substrate.
Simultaneous and selective wide gap partitioning of via structures using plating resist
A multilayer printed circuit board is provided having a first dielectric layer and a first plating resist selectively positioned in the first dielectric layer. A second plating resist may be selectively positioned in the first dielectric layer or a second dielectric layer, the second plating resist separate from the first plating resist. A through hole extends through the first dielectric layer, the first plating resist, and the second plating resist. An interior surface of the through hole is plated with a conductive material except along a length between the first plating resist and the second plating resist. This forms a partitioned plated through hole having a first via segment electrically isolated from a second via segment.
Simultaneous and selective wide gap partitioning of via structures using plating resist
A multilayer printed circuit board is provided having a first dielectric layer and a first plating resist selectively positioned in the first dielectric layer. A second plating resist may be selectively positioned in the first dielectric layer or a second dielectric layer, the second plating resist separate from the first plating resist. A through hole extends through the first dielectric layer, the first plating resist, and the second plating resist. An interior surface of the through hole is plated with a conductive material except along a length between the first plating resist and the second plating resist. This forms a partitioned plated through hole having a first via segment electrically isolated from a second via segment.
METHOD FOR MANUFACTURING WIRING BOARD
First, a patterned substrate including an insulating substrate, a conductive seed layer, and an insulating layer is prepared. The seed layer is disposed on the insulating substrate, and consists of a first part having a predetermined pattern corresponding to the wiring pattern and a second part as a part other than the first part. The insulating layer is disposed on the second part of the seed layer. Subsequently, a metal layer having a thickness larger than a thickness of the insulating layer is formed on the first part of the seed layer. Here, a voltage is applied between an anode and the seed layer while a resin film containing a metal ion-containing solution is disposed between the patterned substrate and the anode and the resin film and the seed layer are brought into pressure contact. Subsequently, the insulating layer and the second part of the seed layer are removed.
Simultaneous and selective wide gap partitioning of via structures using plating resist
A multilayer printed circuit board is provided having a first dielectric layer and a first plating resist selectively positioned in the first dielectric layer. A second plating resist may be selectively positioned in the first dielectric layer or a second dielectric layer, the second plating resist separate from the first plating resist. A through hole extends through the first dielectric layer, the first plating resist, and the second plating resist. An interior surface of the through hole is plated with a conductive material except along a length between the first plating resist and the second plating resist. This forms a partitioned plated through hole having a first via segment electrically isolated from a second via segment.
THREE DIMENSIONAL CIRCUIT FORMATION
Devices, methods, and systems for forming an electrical circuit out of a conductor embedded in two layers of substrate are disclosed. Portions of the two layers of substrate and the conductor are removed, forming a cavity through the two layers and the conductor. A blocker material is deposited along the wall of the cavity. A portion of the blocker material and adjacent layer of the substrate is removed forming another cavity in contact with a part of the conductor. A surface of the second cavity is then electroless plated by a conductive metal to form part of the electrical circuit.
Method for manufacturing wiring board
First, a patterned substrate including an insulating substrate, a conductive seed layer, and an insulating layer is prepared. The seed layer is disposed on the insulating substrate, and consists of a first part having a predetermined pattern corresponding to the wiring pattern and a second part as a part other than the first part. The insulating layer is disposed on the second part of the seed layer. Subsequently, a metal layer having a thickness larger than a thickness of the insulating layer is formed on the first part of the seed layer. Here, a voltage is applied between an anode and the seed layer while a resin film containing a metal ion-containing solution is disposed between the patterned substrate and the anode and the resin film and the seed layer are brought into pressure contact. Subsequently, the insulating layer and the second part of the seed layer are removed.
METHOD FOR MANUFACTURING WIRING BOARD, AND WIRING BOARD
Provided is a method for manufacturing a wiring board that forms a wiring layer having favorable adhesion without a resin resist pattern. A method prepares a substrate with seed-layer including: a underlayer on the surface of an insulating substrate; and a seed layer on the surface of the underlayer, the seed layer having a predetermined pattern and containing metal; presses a solid electrolyte membrane against the seed layer and the underlayer, and applies voltage between an anode and the underlayer to reduce metal ions in the membrane and form a metal layer on the surface of the seed layer; and removes an exposed region without the seed layer and the metal layer of the underlayer to form a wiring layer including the underlayer, the seed layer and the metal layer on the surface of the substrate.