H
ELECTRICITY
H
ELECTRICITY
H10
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10B
ELECTRONIC MEMORY DEVICES
H10B
ELECTRONIC MEMORY DEVICES
41/00
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
41/00
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
H10B41/20
characterised by three-dimensional arrangements, e.g. with cells on different height levels
H10B41/20
characterised by three-dimensional arrangements, e.g. with cells on different height levels
H10B41/23
with source and drain on different levels, e.g. with sloping channels
H10B41/23
with source and drain on different levels, e.g. with sloping channels
H10B41/27
the channels comprising vertical portions, e.g. U-shaped channels
H10B41/27
the channels comprising vertical portions, e.g. U-shaped channels