The present invention provides a display device using a semiconductor light-emitting element and a manufacturing method therefor, the display device transferring semiconductor light-emitting elements on a temporary substrate, and then directly implementing, through a stack process, the structure of a wiring substrate on the temporary substrate on which the semiconductor light-emitting elements are arrayed, thereby enabling the semiconductor light-emitting elements and the wiring substrate to be electrically connected.

A light emitting element ink and a method of manufacturing a display device are provided. The light emitting element ink includes a light emitting element solvent, a light emitting element dispersed in the light emitting element solvent, the light emitting element including a plurality of semiconductor layers and an insulating film surrounding outer surfaces of the semiconductor layers, a thickener dispersed in the light emitting element solvent, wherein a compound of the thickener includes a functional group capable of forming a hydrogen bond together with a compound of the light emitting element solvent or another compound of the thickener and the compound of the thickener is represented by Chemical Formula 1.

An embodiment of the disclosure provides an electronic device including multiple units. Each unit in the units includes multiple primary bonding regions and at least one reserved bonding region. Each reserved bonding region is connected to the primary bonding regions. The number of the at least one reserved bonding region is less than the number of primary bonding regions.

A display device and a method of manufacturing a display device are provided. A method of manufacturing a display device may include: forming a sacrificial layer on a carrier glass; forming a first substrate layer on the sacrificial layer, the first substrate layer including an organic insulation material; forming a first through-hole in the first substrate layer, the first through-hole passing through the first substrate layer; forming a wiring on an upper surface of the first substrate layer, the wiring extending into the first through-hole; sequentially forming a circuit layer, an emission layer, and an encapsulation layer on the wiring; separating the sacrificial layer and the carrier glass from the first substrate layer by irradiating the sacrificial layer with a laser; and attaching a driving element on a lower surface of the first substrate layer, the driving element being electrically connected to the wiring through the first through-hole.

A light-emitting module includes a first terminal, a second terminal, a first light source, a second light source, and a third light source. The first light source is connected between the first terminal and the second terminal. The second light source and the third light source are connected between the first terminal and the second terminal, in anti-parallel with the first light source. The first, second, and third light sources are aligned in a first direction along a light-emitting surface, with the first light source between the second light source and the third light source.

Structures and methods are disclosed for fabricating optoelectronic solid state array devices. In one case a backplane and array of micro devices is aligned and connected through bumps.

A unit pixel is provided. The unit pixel includes a transparent substrate, a first light blocking layer disposed on the transparent substrate and having windows that transmit light, an adhesive layer covering the first light blocking layer, a plurality of light emitting devices disposed on the adhesive layer to be arranged on the windows, and a second light blocking layer covering side surfaces of the light emitting devices.

This semiconductor light emitting device includes an emission layer, a passivation layer on the emission layer, and a first adhesive layer on the passivation layer. The passivation layer may include a plurality of grooves, and the first adhesive layer may be disposed in each of the plurality of grooves. Arranging the first adhesive layer in the plurality of grooves may enhance fixability. The display device includes a plurality of semiconductor light emitting devices. The semiconductor light emitting devices may include a horizontal semiconductor light emitting device, a flip chip semiconductor light emitting device, or a vertical semiconductor light emitting device.

A display device includes a substrate, a transistor, a first conductive feature, a conductive pad and a light-emitting device. The substrate has a first area. The transistor is located in the first area. The first conductive feature is located over the transistor and electrically connects a source/drain of the transistor. The first conductive feature includes a first protective layer and a first conductive layer. The first protective layer has a first thickness and at least includes titanium. The first conductive layer is located above the first protective layer, has a second thickness and includes aluminum. The second thickness is greater than the first thickness. The conductive pad is located on the first conductive feature and electrically connects the first conductive feature. The conductive pad at least includes nickel and gold. The light-emitting device is located on the conductive pad and electrically connects the conductive pad.

A chip structure is provided. The chip structure includes a chip wafer unit and a color conversion layer substrate unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting functional layers. The color conversion layer substrate unit includes a color conversion layer arranged on the light-exit side of the chip wafer unit. The chip wafer unit further includes a first bonding layer, arranged between the sub-pixel light-emitting functional layers and the color conversion layer, and configured to bond the chip wafer unit and the color conversion layer substrate unit.