The present disclosure relates to a semiconductor package. The semiconductor package includes a semiconductor die and a plurality of leads. The plurality of leads includes two drain leads connected to the drain, two source leads connected to the source, a gate lead connected to the gate, the gate lead positioned between the two source leads, and a sensing lead positioned between the two source leads. The two source leads, the gate lead, and the sensing lead are positioned on a first side of the semiconductor package that is opposite to a second side of the semiconductor package, and wherein the drain leads are positioned on the second side.

The various embodiments described herein include methods, devices, and systems for fabricating and operating diodes. In one aspect, an electrical circuit includes: (1) a diode component having a particular energy band gap; (2) an electrical source electrically coupled to the diode component and configured to bias the diode component in a particular state; and (3) a heating component thermally coupled to a junction of the diode component and configured to selectively supply heat corresponding to the particular energy band gap.

A power semiconductor circuit includes: a power semiconductor element having a gate electrode configured to actuate the power semiconductor element, a collector electrode, and an emitter electrode electrically connected to a first emitter terminal; and a temperature sensor having a first measurement point with a measurement terminal and a second measurement point electrically connected to the emitter electrode, so that a voltage which drops over the temperature sensor is measurable between the measurement terminal and the first emitter terminal for the temperature measurement. Corresponding methods for determining a temperature of a power semiconductor element and for determining a sign of a load current in a bridge circuit are also described.