Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.

A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer which is laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of a film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.

A spin-torque oscillator includes: a driving reference layer having a fixed magnetization; a nonmagnetic spacer layer; and a free layer having a changeable magnetization exhibiting an easy-cone magnetic anisotropy, the nonmagnetic spacer layer being between the driving reference layer and the free layer, a magnetic anisotropy energy of the free layer having a local maximum along an axis, a local minimum at an angle from the axis, and a global maximum different from the local maximum, the angle being greater than zero degrees, wherein the spin-torque oscillator is configured such that the changeable magnetization of the free layer precesses around the axis.

According to one embodiment, a magnetoresistive memory device includes a stacked layer structure includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on the first magnetic layer, which is opposite the nonmagnetic layer. The third magnetic layer includes a first magnetic material portion and a second magnetic material portion provided between the stacked layer structure and the first magnetic material portion. The saturation magnetization of the second magnetic material portion is smaller than that of the first magnetic material portion.

An integrated magnetic field sensor, having a semiconductor body with a surface and a rear surface, and a metal carrier, with a front and a rear, wherein the rear of the semiconductor body is connected to the front of the metal carrier in a non-positive manner, and a Hall sensor, embodied on the surface of the semiconductor body, with a main extension surface, and a magnet with a first magnetic pole embodied along a first surface, which first magnetic pole has a central axis embodied in a perpendicular manner on the first surface, wherein the metal carrier, the magnet and the semiconductor body are arranged in a common housing and precisely one or at least one Hall sensor is arranged in the housing.

Direct growth of graphene on Co.sub.3O.sub.4(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp.sup.2 carbon lineshape, at average carbon coverages from 0.4-3 monolayers. Low energy electron diffraction (LEED) indicates (111) ordering of the sp.sup.2 carbon film with a lattice constant of 2.5 (0.1) characteristic of graphene. Six-fold symmetry of the graphene diffraction spots is observed at 0.4, 1 and 3 monolayers. The LEED data also indicate an average domain size of 1800 , and show an incommensurate interface with the Co.sub.3O.sub.4(111) substrate, where the latter exhibits a lattice constant of 2.8 (0.1) . Core level photoemission shows a characteristically asymmetric C(1s) feature, with the expected lr to lr* satellite feature, but with a binding energy for the three monolayer film of 284.9 (0.1) eV, indicative of substantial graphene-to-oxide charge transfer.

A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

A voltage switchable coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A chrome oxide layer is formed on the cobalt by MBE at room at UHV at room temperature. There was thin cobalt oxide interface between the chrome oxide and the cobalt. Other magnetic materials may be employed. A few ML field of graphene is deposited on the chrome oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.

According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer.

A lateral bipolar junction transistor (BJT) magnetic field sensor that includes a layout of two or more adjacent lateral BJT devices. Each BJT includes a semiconductor base region of a first conductivity type doping, a semiconductor emitter region of a second conductivity type doping and laterally contacting the base region; and a first semiconductor collector region of a second conductivity type doping contacting said base region on an opposite side thereof. A second collector region of the second conductivity type doping is also formed contacting the base region on the opposite side thereof in spaced apart relation with the first collector region. The first adjacent lateral BJT device includes the emitter, base and first collector region and the second adjacent lateral BJT device includes the emitter, base and second collector region. The sensor induces a detectable difference in collector current amounts in the presence of an external magnetic field transverse to a plane defined by the layout.