A light emitting element and a display device including the same are provided. The light emitting element includes: a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and an insulation layer surrounding an outer surface of the passivation layer, wherein the passivation layer includes a two-dimensional (2D) material.

A chip structure is provided. The chip structure includes a chip wafer unit and a color conversion layer substrate unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting functional layers. The color conversion layer substrate unit includes a color conversion layer arranged on the light-exit side of the chip wafer unit. The chip wafer unit further includes a first bonding layer, arranged between the sub-pixel light-emitting functional layers and the color conversion layer, and configured to bond the chip wafer unit and the color conversion layer substrate unit.

A semiconductor light-emitting apparatus includes: a package substrate; a semiconductor light-emitting element flip-chip bonded on the package substrate; a frame body provided around the semiconductor light-emitting element on the package substrate; and a sealing member that covers the semiconductor light-emitting element on the package substrate, covers an upper surface of the frame body, and has translucency at an emission wavelength of the semiconductor light-emitting element. A height of the upper surface of the frame body is smaller than a height ha of an upper surface of the semiconductor light-emitting element.

A display module, an LED optical device and a manufacturing method therefor. The display module and the LED optical device each includes a substrate (1), a plurality of light-emitting units (2) arranged on the top surface of the substrate (1), and a packaging layer (3) arranged on the substrate (1) and covering each light-emitting unit (2), where each light-emitting unit (2) includes at least one LED chip, and the packaging layer (3) is configured to transmit light emitted by the LED chip.

A display panel, a tiled display panel and a manufacturing method of display panel are provided. The display panel includes a substrate; a light-shielding layer disposed on the substrate and provided with a plurality of through-holes; a transparent insulation layer including transparent portions arranged in the through-holes respectively; a light-emitting layer disposed on the transparent insulation layer, wherein the light-emitting layer includes a plurality of light-emitting diode (LED) chips are disposed to the plurality of through-holes in a one-to-one correspondence, and a light-emitting surface the LED chip faces to the transparent portion; a device array layer disposed on the light-shielding layer and including a driver and a plurality of metal wirings used to connect the LED chips with the driver; and a sealing layer disposed on the substrate and encapsulating the light-shielding layer, the transparent insulation layer, the light-emitting layer, and the device array layer.

A light-emitting device includes: a light-emitting element configured to emit first light; a light-transmissive member covering an upper surface of the light-emitting element and including a wavelength conversion material configured to absorb a portion of the first light and emit second light; a light-scattering member disposed on the light-transmissive member, including a light-scattering material, and having a higher reflectance at a peak wavelength of the first light than at a peak wavelength of the second light; and a light-adjustment member located in or on the light-scattering member and having either (i) a higher absorptance at the peak wavelength of the second light than at the peak wavelength of the first light, or (ii) a higher reflectance at the peak wavelength of the second light than at the peak wavelength of the first light. A lateral surface of the light-transmissive member is exposed from the light-scattering member and the light-adjustment member.

A LED packaging module includes a plurality of LED chips, a wiring layer, and an encapsulant component. The LED chips are spaced apart, each of which includes chip first, chip second, and chip side surfaces, and an electrode unit. The wiring layer is disposed on the chip second surfaces, has first, second, and side wiring layer surfaces, and is divided into a plurality of wiring parts spaced apart. The first wiring layer surface contacts and is electrically connected to the electrode units. The encapsulant component includes first and second encapsulating layers, covers the chip side surfaces, the chip first surfaces, and the side wiring layer surface, and fills gaps among the wiring parts. Each LED chip has a thickness represented by T.sub.A, the first encapsulating layer has a thickness represented by T.sub.B, and T.sub.A and T.sub.B satisfy a relationship: T.sub.B/T.sub.A1.

A silicon carbide semiconductor device, comprising: a silicon carbide epitaxial layer, wherein the silicon carbide epitaxial layer comprises a first surface and a second surface that are opposite to each other, the first surface comprises a gate region and a source region located on two sides of the gate region; a first trench, opened at the first surface in the gate region; a first voltage-resistant shielding structure in the silicon carbide epitaxial layer and surrounding a lower part of the first trench; a gate structure in the first trench; a gate metal on a surface of the gate structure; a second voltage-resistant shielding structure, embedded under the first surface in the source portion; a source metal on the first surface in the source region; and a doped well, embedded under the first surface and located between the first trench and the second voltage-resistant shielding structure.

A trench gate power MOSFET, including: a substrate provided with a hexagonal wide bandgap semiconductor of a first conductivity type; an epitaxial layer grown on the substrate and of the first conductivity type; a body region formed on the epitaxial layer and of a second conductivity type; a trench formed in the body region by etching, where a length direction of the trench is parallel to a projection, on the surface of a wafer, of the C axis; a second conductivity-type pillar formed by implanting first ions into a bottom region of the trench along the C axis of the hexagonal wide bandgap semiconductor material, where the bottom region of the trench is located below the trench, and is connected to the bottom of the trench, and the longitudinal depth of the second conductivity-type pillar is at least not less than 50% of the thickness of the epitaxial layer located in the bottom region of the trench; and a trench gate formed by filling the trench with a filler.

A trench gate power MOSFET, including: a substrate provided with a hexagonal wide bandgap semiconductor of a first conductivity type; an epitaxial layer grown on the substrate and of the first conductivity type; a body region formed on the epitaxial layer and of a second conductivity type; a trench formed in the body region by etching, where a length direction of the trench is parallel to a projection, on the surface of a wafer, of the C axis; a second conductivity-type pillar formed by implanting first ions into a bottom region of the trench along the C axis of the hexagonal wide bandgap semiconductor material, where the bottom region of the trench is located below the trench, and is connected to the bottom of the trench, and the longitudinal depth of the second conductivity-type pillar is at least not less than 50% of the thickness of the epitaxial layer located in the bottom region of the trench; and a trench gate formed by filling the trench with a filler.