A semiconductor device is described herein. The semiconductor device includes a substrate and a collector region in the substrate. The semiconductor device also includes a plurality of emitter regions in the substrate, each of the plurality emitter regions separate from each other, wherein the plurality of emitter regions is disposed in an area bounded by the collector region.

A semiconductor device is provided. The semiconductor includes at least one of a well area in a substrate and having a first conductivity-type; impurity-implanted areas in the well, and having a second conductivity-type different from the first conductivity-type and arranged in a first direction, a first fin structure on the impurity-implanted area and having the second conductivity-type, wherein the first fin structure includes first semiconductor patterns and first sacrificial patterns alternately stacked; a first contact on the first fin structure; a first epitaxial pattern on the well area and having the first conductivity-type; and a second contact on the first epitaxial pattern.

A heterojunction bipolar transistor and a base-collector grade layer. The heterojunction bipolar transistor includes a substrate, a sub-collector layer, a collector layer, a base layer, a base-collector grade layer and an emitter layer. The sub-collector layer is disposed on the substrate. The collector layer is disposed over the sub-collector layer. The base layer is disposed over the collector layer. The base-collector grade layer is disposed between the base layer and the collector layer, and includes at least two stacked periodic structures. Each periodic structure includes an In.sub.0.53Ga.sub.0.47As layer and an Al.sub.xGa.sub.yIn.sub.1-x-yAs layer stacked on the In.sub.0.53Ga.sub.0.47As layer. The range of x is 0.040.44, the range of y is 0.440.04, and the thickness of the Al.sub.xGa.sub.yIn.sub.1-x-yAs layer is 0.6 nm1.8 nm. The emitter layer is disposed on the base layer.

A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 310.sup.16 cm.sup.3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHZ. Other embodiments of the module are provided along with related methods and components thereof.

Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. The structure comprises an intrinsic base including a first semiconductor layer, a collector including a second semiconductor layer, and an emitter including a third semiconductor layer. The first semiconductor layer, which comprises silicon-germanium, includes a first portion and a second portion adjacent to the first portion. The second semiconductor layer includes a portion on the first portion of the first semiconductor layer, and the third semiconductor layer includes a portion on the second portion of the first semiconductor layer. The structure further comprises a dielectric spacer laterally between the portion of the second semiconductor layer and the portion of the third semiconductor layer.

Bipolar junction transistor (BJT) structures are provided. A BJT structure includes a semiconductor substrate, a collector region formed in the semiconductor substrate, a base region formed over the collector region, an emitter region formed over the collector region, a ring-shaped shallow trench isolation (STI) region formed in the collector region, and a base dielectric layer formed over the collector region and on opposite sides of the base region. The base dielectric layer is surrounded by an inner side wall of the ring-shaped STI region.

There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) with buried depletion electrode. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a second conductivity type opposite the first conductivity type situated over the drift region. The IGBT also includes a plurality of deep insulated trenches with a buried depletion electrode and at least one gate electrode disposed therein. In addition, the IGBT includes an active cell including an emitter adjacent the gate electrode, and an implant zone, situated between adjacent deep insulated trenches. The implant zone is formed below the base layer and has the first conductivity type. In one implementation, the IGBT may also include a dummy cell neighboring the active cell.

An HBT includes a semiconductor substrate having first and second principal surfaces opposite each other; and a collector layer, a base layer, and an emitter layer stacked in this order on the first principal surface side of the semiconductor substrate. The collector layer includes a first semiconductor layer with metal particles dispersed therein, the metal particles each formed by a plurality of metal atoms bonded with each other.

Integrated chips and methods of forming the same include forming a gate stack around a first semiconductor fin and a second semiconductor fin. The gate stack around the second semiconductor fin is etched away. An extrinsic base is formed around the second semiconductor fin in a region exposed by etching away the gate stack.

Methods of according to the present disclosure can include: providing a substrate including: a first semiconductor region, a second semiconductor region, and a trench isolation (TI) laterally between the first and second semiconductor regions; forming a seed layer on the TI and the second semiconductor region of the substrate, leaving the first semiconductor region of the substrate exposed; forming an epitaxial layer on the substrate and the seed layer, wherein the epitaxial layer includes: a first semiconductor base material positioned above the first semiconductor region of the substrate, and an extrinsic base region positioned above the seed layer; forming an opening within the extrinsic base material and the seed layer to expose an upper surface of the second semiconductor region; and forming a second semiconductor base material in the opening.