The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

The disclosure relates to a trench capacitor device for a superconducting electronic circuit. The trench capacitor device includes a substrate, a first capacitor electrode, and a second capacitor electrode, each electrode including a superconductor and extending into the substrate. The first electrode is circumferentially enclosed by the second electrode such that an inwardly facing surface of the second electrode faces an outwardly facing surface of the first electrode.

A quantum device includes a transistor pattern carried by a substrate, the transistor pattern having, in a stack, a gate dielectric and a superconducting gate on the gate dielectric. The superconducting gate has a base, a tip, sidewalls and at least one superconducting region made of a material that has, as a main component, at least one superconducting element. The superconducting gate also includes a basal portion having a dimension, taken in a first direction of a basal plane that is smaller than a dimension of the tip of the superconducting gate. The transistor pattern further includes at least one dielectric portion made of a dielectric material in contact with the top face of the gate dielectric and the basal portion of the superconducting gate.

A magnetoresistive device is provided comprising an active channel comprises an extremely large magnetoresistance (XMR) material. A gate electrode surrounds the active channel, wherein the gate electrode has a first portion on one side of the active channel and a second portion on the opposite side of the active channel. An insulating spacer electrically isolates the active channel from the gate electrode. Electrical current through the gate electrode generates and focuses a magnetic field applied to the active channel.