The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device. In one embodiment, a method for manufacturing a semiconductor device may comprise the steps of: growing a stack layer by alternately stacking sacrificial layers and channel regions on a substrate; forming a sacrificial poly gate on the stack layer; forming inner spacers and side spacers on side surfaces of the sacrificial layers and side surfaces of the sacrificial poly gate; and heat treating the inner spacers or the side spacers in a chamber set to a predetermined process pressure and a predetermined process temperature.

A semiconductor device includes a semiconductor substrate, a source and a drain provided to be horizontally spaced apart from each other on the semiconductor substrate, a channel layer provided between the source and the drain, a gate insulating layer provided on the channel layer, a gate electrode provided on the gate insulating layer, and a spacer provided to surround the gate electrode, wherein the spacer includes an amorphous boron nitride film.

A semiconductor device (200) includes an oxide (230) over a substrate: a first conductor (242a1) and a second conductor (242b1) that are over the oxide and separated from each other; a third conductor (242a2) in contact with a part of a top surface of the first conductor; a fourth conductor (242b2) in contact with a part of a top surface of the second conductor; a first insulator (271a, 271b) that is positioned over the third conductor and the fourth conductor and has an opening overlapping with a region between the third conductor and the fourth conductor; a second insulator (255) that is positioned in the opening of the first insulator and in contact with another part of the top surface of the first conductor, another part of the top surface of the second conductor, a side surface of the third conductor, and a side surface of the fourth conductor; a third insulator (250) that is positioned in the opening of the first insulator and in contact with a top surface of the oxide, a side surface of the first conductor, a side surface of the second conductor, and a side surface of the second conductor; and a fifth conductor that is positioned over the third insulator in the opening of the first insulator and includes a region overlapping with the oxide with the third insulator therebetween. A distance (L2) between the first conductor and the second conductor is smaller than a distance (L1) between the third conductor and the fourth conductor.

A high voltage field effect transistor includes a thick silicon oxide gate dielectric and polysilicon gate electrode, while a low voltage field effect transistor includes a high dielectric constant metal oxide gate dielectric and a metallic gate electrode.

A lateral diffusion metal-oxide-semiconductor (LDMOS) transistor. includes a first gate. The LDMOS transistor further includes a first source/drain (S/D) region on a first side of the first gate. The LDMOS transistor further includes a second S/D region on a second side of the first gate, wherein the second side is opposite the first side. The LDMOS transistor further includes a first spacer surrounding the first gate. The first spacer includes a first portion on the first side of the first gate, wherein the first portion has a top surface substantially coplanar with a top surface of the first gate, and a second portion on the second side of the first gate, wherein the second portion comprises a first horn structure extending above the top surface of the first gate.

Some embodiments of the disclosure provide an apparatus comprising a gate structure on a semiconductor substrate and a liner on a side wall of the gate structure. The side wall of the gate structure include a first spacer and a second spacer on the first spacer. The second spacer has a top portion lower than a top portion of the first spacer. The liner covers at least the second spacer including the top portion thereof.

The present disclosure provides a semiconductor device, a method, and an electronic apparatus. The device includes: a substrate; a channel layer stacking portion including multiple channel layers along a thickness direction of the substrate, a length direction of the channel layer is perpendicular to the thickness direction of the substrate, and the channel layer includes a first end, a middle section and a second end along the length direction; a gate-all-around surrounding the middle section; a source/drain functional portion; and a spacer structure including first and second spacers. The first spacer is between first ends and second ends of adjacent channel layers, and includes a cavity. The second spacer is on a side of the channel layer stacking portion away from the substrate and on both sides of the gate-all-around along the length direction. A dielectric constant of the first spacer is greater than that of the second spacer.

The present disclosure provides a semiconductor device and a method of fabricating the same. The semiconductor device includes: a substrate; a gate layer formed over the substrate, which includes a main gate and an extended gate spaced apart from each other; and an insulating dielectric layer formed on the substrate and connecting the main gate and the extended gate. The present disclosure allows the gate layer to function as desired while avoiding performance of the semiconductor device from being degraded due to the presence of parasitic capacitance.

A semiconductor device including a gate structure including a gate electrode which is formed over a substrate and includes a metal whose volume is increased when solidified, and a gate spacer formed on both sides of the gate structure. The performance of semiconductor devices is improved by applying a metal material to form the gate electrode whose volume increases when solidified and thereby applies a tensile stress to a channel.

Disclosed is a method for manufacturing a zeroth interlayer dielectric, including: step 1: providing a semiconductor substrate subjected to a process of forming a contact etch stop layer; step 2: performing a first deposition process using a HARP process, to form a first oxide layer fully filling a spacing region; step 3: polishing the first oxide layer using a first chemical mechanical polishing process; step 4: performing wet etch to lower a top surface of the first oxide layer and form a first groove at the top of the spacing region; step 5: performing a second deposition process using an HDP CVD process, to form a second oxide layer fully filling the first groove; and step 6: polishing the second oxide layer using a second chemical mechanical polishing process, which is stopped on a surface of a first gate material layer of a first gate structure.