In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first doped region and a second doped region disposed within a substrate. A data storage structure is arranged over the substrate and laterally between the first doped region and the second doped region. An isolation structure is arranged within the substrate along a first side of the data storage structure. The first doped region is laterally between the isolation structure and the data storage structure. A remnant is arranged over and along a sidewall of the isolation structure. The remnant includes a first material having a vertically extending segment and a horizontally extending segment protruding outward from a sidewall of the vertically extending segment.

A method of manufacturing a gate structure includes at least the following steps. A gate dielectric layer is formed. A work function layer is deposited on the gate dielectric layer. A barrier layer is formed on the work function layer. A metal layer is deposited on the barrier layer to introduce fluorine atoms into the barrier layer. The barrier layer is formed by at least the following steps. A first TiN layer is formed on the work function layer. A top portion of the first TiN layer is converted into a trapping layer, and the trapping layer includes silicon atoms or aluminum atoms. A second TiN layer is formed on the trapping layer.

A semiconductor device a method of forming the same are provided. The method includes forming a fin extending from a substrate and forming a gate dielectric layer along a top surface and sidewalls of the fin. A first thickness of the gate dielectric layer along the top surface of the fin is greater than a second thickness of the gate dielectric layer along the sidewalls of the fin.

A transistor comprises a channel region having a frontside and a backside. A gate is adjacent the frontside of the channel region with a gate insulator being between the gate and the channel region. Insulating material having net negative charge is adjacent the backside of the channel region. The insulating material comprises at least one of Al.sub.xF.sub.y, HfAl.sub.xF.sub.y, AlO.sub.xN.sub.y, and HfAl.sub.xO.sub.yN.sub.z, where x, y, and z are each greater than zero. Other embodiments and aspects are disclosed.

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a channel layer, an adhesion layer disposed over the channel layer, a first hafnium-containing dielectric layer disposed over the adhesion layer, a second hafnium-containing dielectric layer disposed over the first hafnium-containing dielectric layer, a gate structure, and source and drain terminals. The second hafnium-containing dielectric layer has a hafnium content lower than a hafnium content of the first hafnium-containing dielectric layer. A dielectric constant of the second hafnium-containing dielectric layer is larger than a dielectric constant of the first hafnium-containing dielectric layer.

A switching includes a gallium nitride semiconductor and a gate insulation film. The gate insulation film is made of silicon oxide and disposed above the gallium nitride semiconductor layer. An interface between the gallium nitride insulation film and the gate insulation film is either free of a gallium oxide layer or provided with the gallium oxide layer with a thickness of 1 nanometer or smaller.

In some embodiments, a semiconductor device is provided. The semiconductor device includes a gate electrode disposed on a substrate. Source/drain regions are disposed on or within the substrate along opposing sides of the gate electrode. A noise reducing component is arranged along an upper surface of the gate electrode and/or along an upper surface of the substrate over the source/drain regions. A cap layer covers the upper surface of the gate electrode and/or the upper surface of the substrate over the source/drain regions. An inter-level dielectric (ILD) is disposed over and along one or more sidewalls of the cap layer.

A method for making a semiconductor device may include forming a superlattice gettering layer on a substrate. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include forming a memory device above the superlattice gettering layer including a metal induced crystallization (MIC) channel adjacent the semiconductor substrate, and a gate associated with the MIC channel. The superlattice gettering layer may further include gettered metal particles from the MIC channel.

Provided herein may be a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a stacked body including interlayer insulating layers and a select line disposed between the interlayer insulating layers, a core insulating layer penetrating the stacked body, a semiconductor pattern extending along a sidewall of the core insulating layer and including an undoped area disposed between the select line and the core insulating layer, doped semiconductor patterns disposed between the semiconductor pattern and the interlayer insulating layers, and a gate insulating layer disposed between the semiconductor pattern and the select line.

Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises first semiconductor layers and second semiconductor layers over a substrate, wherein the first semiconductor layers and the second semiconductor layers are separated and stacked up, and a thickness of each second semiconductor layer is less than a thickness of each first semiconductor layer; a first interfacial layer around each first semiconductor layer; a second interfacial layer around each second semiconductor layer; a first dipole gate dielectric layer around each first semiconductor layer and over the first interfacial layer; a second dipole gate dielectric layer around each second semiconductor layer and over the second interfacial layer; a first gate electrode around each first semiconductor layer and over the first dipole gate dielectric layer; and a second gate electrode around each second semiconductor layer and over the second dipole gate dielectric layer.