Gate structures formed from substantially rectangular shaped gate structure layout shapes positioned on a gate horizontal grid having at least seven gate gridlines within a region. A first-metal layer including first-metal structures formed from substantially rectangular shaped first-metal structure layout shapes is formed above top surfaces of the gate structures within the region. The first-metal structure layout shapes are positioned on a first-metal vertical grid having at least eight first-metal gridlines. At least six contact structures are formed from substantially rectangular shaped contact structure layout shapes in physical and electrical contact with corresponding ones of at least six of the gate structures. A total number of first-transistor-type-only gate structures equals a total number of second-transistor-type-only gate structures within the region. At least four transistors of a first transistor type and at least four transistors of a second transistor type collectively form part of a logic circuit within the region.

Gate structures are positioned within a region in accordance with a gate horizontal grid that includes at least seven gate gridlines separated from each other by a gate pitch of less than or equal to about 193 nanometers. Each gate structure has a substantially rectangular shape with a width of less than or equal to about 45 nanometers and is positioned to extend lengthwise along a corresponding gate gridline. Each gate gridline has at least one gate structure positioned thereon. A first-metal layer is formed above top surfaces of the gate structures within the region and includes first-metal structures positioned in accordance with a first-metal vertical grid that includes at least eight first-metal gridlines. Each first-metal structure has a substantially rectangular shape and is positioned to extend along a corresponding first-metal gridline. At least six contact structures of substantially rectangular shape contact the at least six gate structures.

Gate structures are positioned within a region in accordance with a gate horizontal grid that includes at least seven gate gridlines separated from each other by a gate pitch of less than or equal to about 193 nanometers. Each gate structure has a substantially rectangular shape with a width of less than or equal to about 45 nanometers and is positioned to extend lengthwise along a corresponding gate gridline. Each gate gridline has at least one gate structure positioned thereon. A first-metal layer is formed above top surfaces of the gate structures within the region and includes first-metal structures positioned in accordance with a first-metal vertical grid that includes at least eight first-metal gridlines. Each first-metal structure has a substantially rectangular shape and is positioned to extend along a corresponding first-metal gridline. At least six contact structures of substantially rectangular shape contact the at least six gate structures.

Wafers, chips, or dies that contain fill cells with structures configured to obtain in-line data via non-contact electrical measurements (NCEM). Such NCEM-enabled fill cells may target/expose a variety of open-circuit, short-circuit, leakage, or excessive resistance failure modes, including GATE-snake-open and/or GATE-snake-resistance failure modes. Such wafers, chips, or dies may include Designs of Experiments (DOEs), comprised of multiple NCEM-enabled fill cells, in at least two variants, all targeted to the same failure mode.

A semiconductor device includes a substrate having a first active region disposed in a first region of a substrate and a second active region disposed in a second region of the substrate. A first gate stack is disposed over the first active region and a second gate stack is disposed over the second active region, the first and second gate stacks having elongated shapes oriented in a first direction. A first metal layer is disposed over the first gate stack and the second gate stack. The first metal layer includes first metal layer structures oriented in a second direction orthogonal to the first direction. A second metal layer disposed over the first metal layer. The second metal layer includes second metal layer structures oriented in the first direction. A third metal layer is disposed over the second metal layer. The third metal layer includes a third metal layer structures oriented in the second direction.

Wafers, chips, or dies that contain fill cells with structures configured to obtain in-line data via non-contact electrical measurements (NCEM). Such NCEM-enabled fill cells may target/expose a variety of open-circuit, short-circuit, leakage, or excessive resistance failure modes. Such wafers, chips, or dies may include Designs of Experiments (DOEs), comprised of multiple NCEM-enabled fill cells, in at least two variants, all targeted to the same failure mode(s).

An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (NCEM). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one AACNT-short-related failure mode, one GATE-short-related failure mode, and one metal-short-related failure mode.

An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (NCEM). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one AACNT-short-related failure mode, one GATECNT-short-related failure mode, and one TS-short-related failure mode.

An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (NCEM). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one AACNT-short-related failure mode, one GATE-short-related failure mode, and one GATECNT-short-related failure mode.

An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (NCEM). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one AACNT-short-related failure mode, one GATE-short-related failure mode, and one TS-short-related failure mode.