A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In.sub.(a)Ga.sub.(b)Zn.sub.(c)O.sub.(d), the second region being represented by In.sub.(e)Ga.sub.(f)Zn.sub.(g)O.sub.(h), and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

An array substrate, a manufacturing method thereof, and a display panel are provided. The present invention uses an inkjet printing method to construct a two-dimensional nanomaterial as a photosensitive film, and adjusts a composition of the nanomaterial to construct a photoelectric film with high gain, which is then combined with a high mobility film to construct a display device with high mobility and broad spectrum light response.

An embodiment is a method and apparatus to treat surface of polymer for printing. Surface of a polymer having a surface energy modified for a time period to control a feature characteristic and/or provide a hysteresis behavior. A material is printed on the surface to form a circuit pattern having at least one of the controlled feature characteristic and the hysteresis behavior.

In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.

A display panel and a display device are provided by embodiments of the present disclosure, relating to a field of display technology. The display panel comprises a pixel array substrate and an opposite substrate which is located opposite to the pixel array substrate, the pixel array substrate comprising a pixel array and a substrate on which the pixel array is arranged; the pixel array comprises a plurality of columns of sub-pixels, a light-shielding wall being provided between any two adjacent columns of sub-pixels; and a first length of the light-shielding wall in a direction perpendicular to the substrate is smaller than a spacing between the pixel array substrate and the opposite substrate. By providing the light-shielding wall which is enabled to shield sub-pixels(s) so as to decrease a visual range of the display panel, between any two adjacent columns of sub-pixels within the pixel array, a peep-proof aim can be achieved by the embodiments of the present disclosure. And the first length of the light-shielding wall in a direction perpendicular to the substrate is smaller than a spacing between the pixel array substrate and the opposite substrate, such that neither the thickness of the display panel nor that of the display apparatus can be increased by providing the light-shielding wall.

A method of manufacturing a display device includes: forming a gate electrode on a substrate; forming a gate insulating film on the substrate; forming an oxide semiconductor on the substrate; forming a source electrode and a drain electrode on the substrate; forming a passivation film on the substrate; forming a common electrode on the substrate; forming an interlayer insulating film on the substrate; forming a pixel electrode on the substrate; forming an alignment film on the substrate; radiating UV-rays onto the oxide semiconductor; and heat-treating the oxide semiconductor irradiated with the UV-rays. The radiating UV-rays is performed after the forming an oxide semiconductor, and the heat-treating is performed after the forming a passivation film.

Provided is a flexible display apparatus having an improved light extracting efficiency and a method of manufacturing the flexible display apparatus. The flexible display apparatus includes a flexible substrate having a rippled surface, a pixel electrode on the flexible substrate and having a rippled surface, an intermediate layer on the pixel electrode and including a light emission layer, and an opposing electrode facing the pixel electrode. A method of manufacturing the flexible display apparatus includes applying a tensile force to a flexible substrate, forming a pixel electrode on the flexible substrate, removing the tensile force applied to the flexible substrate to form a rippled surface in the pixel electrode, forming an intermediate layer including an light emission layer on the pixel electrode, and forming an opposing electrode facing the pixel electrode.

A method of manufacturing a liquid crystal display device including a TFT substrate with display and peripheral regions. The display region has pixels each having a pixel electrode and a TFT. A counter substrate opposes the TFT substrate and has a color filter formed at a position corresponding to a position at which the pixel electrode is formed above the TFT substrate. The method includes coating, outside of the display region of the TFT substrate, a second alignment film in the shape of a frame, and coating, in the display region, a first alignment film that dries more slowly than the second alignment film. The first and second alignment films are in contact, and the second alignment film is thicker than the first alignment film.

A method of manufacturing a transistor comprising: providing a substrate, a region of semiconductive material supported by the substrate, and a region of electrically conductive material supported by the region of semiconductive material; forming at least one layer of resist material over said regions to form a covering of resist material over said regions; forming a depression in a surface of the covering of resist material, said depression extending over a first portion of said region of conductive material, said first portion separating a second portion of the conductive region from a third portion of the conductive region; removing resist material located under said depression so as to form a window, through said covering, exposing said first portion of the electrically conductive region; removing said first portion to expose a connecting portion of the region of semiconductive material, said connecting portion connecting the second portion to the third portion of the conductive region; forming a layer of dielectric material over the exposed portion of the region of semiconductive material; and depositing electrically conductive material to form a layer of electrically conductive material over said layer of dielectric material, the layer of dielectric material electrically isolating the layer of electrically conductive material from the second and third portions of the conductive region.