H10F30/15

IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE
20170179463 · 2017-06-22 ·

An imaging element has a laminated structure including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer. The second electrode is made of a transparent amorphous oxide having a conductive property.

Manufacturing method of sensing integrated circuit

A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A plurality of connecting structures are formed in the dielectric layer. The connecting structures are respectively and electrically connected to the transistors. A plurality of separated conductive wells are respectively formed in electrical contact with the connecting structures.

OPTICAL SENSOR AND DETECTOR FOR AN OPTICAL DETECTION

Described herein is an optical sensor, a detector including the optical sensor for an optical detection of at least one object, a method for manufacturing the optical sensor and various uses of the optical detector.

The optical sensor can, be supplied as a non-bulky hermetic package which provides an increased degree of protection against possible degradation by humidity and/or oxygen over long terms. Further, the optical sensor may be easily manufactured and integrated on a circuit carrier device.

NARROWBAND LIGHT ABSORPTION DEVICE BASED ON PHASE CHANGE MATERIAL

A narrowband light absorption device based on a phase change material includes: a narrowband light absorption cavity structure, including a metal layer, a dielectric layer, and a phase change layer; and a lithium tantalate single-crystal wafer structure, disposed below the narrowband light absorption cavity structure. When light irradiates the narrowband light absorption cavity structure, the narrowband light absorption cavity structure is configured to absorb light of a corresponding wavelength to produce a pyroelectric effect, and the lithium tantalate single-crystal wafer structure is configured to generate current so as to obtain light intensity information of the light and change a state of the phase change layer to control an on-off state of the switch. The present disclosure achieves dynamic switching control, and features a very narrow full width at half maximum (FWHM), insensitivity to incident light angle variations, a simple structure, easy integration, and a high switching ratio.