Disclosed are a photoelectronic device using a hybrid structure of silica nanoparticles and graphene quantum dots and a method of manufacturing the same. The photoelectronic device according to the present disclosure has a hybrid structure including graphene quantum dots (GQDs) bonded to surfaces of silica nanoparticles (SNPs), thereby increasing energy transfer efficiency.

A semiconductor structure includes a substrate having a front surface and a back surface. The semiconductor structure further includes a first isolation structure extending from the front surface into the substrate, the first isolation structure having a depth D.sub.1 from the front surface. The semiconductor structure further includes a second isolation structure extending from the front surface into the substrate, the second isolation structure having a depth D.sub.2 from the front surface. The semiconductor structure further includes a first etching stop feature in the substrate and contacting the first isolation structure. The semiconductor structure further includes a second etching stop feature in the substrate and contacting the second isolation structure.

An aim of the present invention is to provide a technology to inhibit degradation phenomena of TFTs in an imaging panel having such TFTs in each pixel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes a conversion element that converts scintillation light to electric charge, a thin film transistor connected to the gate line, data line, and conversion element, and a metal wiring line connecting to the conversion element and supplying a bias voltage to the conversion element. The metal wiring line is positioned approximately parallel to the data line so as to overlap the top of the thin film transistor.

To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.

A detection device includes a photodiode, and a thin-film transistor coupled to the photodiode. The thin-film transistor includes a semiconductor layer between a light-blocking layer and the photodiode, and an electrode layer between the semiconductor layer and the photodiode, and the electric layer includes a source electrode and a drain electrode of the thin-film transistor. The source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween.

A multilayer photoelectric converter includes a first photoelectric converter, and a second photoelectric converter. The first photoelectric converter and the second photoelectric converter are stacked in this order from a side of the multilayer photoelectric converter where light is incident. The first photoelectric converter has a sensitivity characteristic with a sensitivity having a peak at a wavelength 1a. The second photoelectric converter has a sensitivity characteristic with a sensitivity having a peak at a wavelength 2a. For the multilayer photoelectric converter, the relationship 1a<2a is satisfied. The sensitivity of the second photoelectric converter at the wavelength 2a is less than the sensitivity of the first photoelectric converter at the wavelength 1a.

Provided is a technique that reduces patterning defects of data lines in an imaging panel and drain electrodes in thin film transistors without lowering the aperture ratio of the imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines 11 and a plurality of data lines 12. The imaging panel includes, in each of the pixels 13, a conversion element 15 that converts scintillation light to electric charge, and a thin film transistor 14 connected to the gate line 11, data line 12, and conversion element 15. A drain electrode 144 of the thin film transistor 14 is formed such that edges 144E1 and 144E2 of the drain electrode 144 near the data line 12 are more inside the pixel 13 than edges 15E1 and 15E2 of the conversion element 15 near the data line 12.

A method of forming a semiconductor structure includes implanting neutral dopants in a first region of a substrate to form a first etching stop feature, the first etching stop feature having a depth D.sub.1. The method further includes implanting neutral dopants in a second region of the substrate to form a second etching stop feature, wherein the second etching stop feature has a depth D.sub.2, and D.sub.1 is different from D.sub.2. The method further includes etching the substrate to form a first trench and a second trench, wherein the first trench and the second trench expose the first etching stop feature and the second etching stop feature, respectively. The method further includes filling the first trench and the second trench with a dielectric material.

Disclosed are a photoelectronic device using a hybrid structure of silica nanoparticles and graphene quantum dots and a method of manufacturing the same. The photoelectronic device according to the present disclosure has a hybrid structure including graphene quantum dots (GODs) bonded to surfaces of silica nanoparticles (SNPs), thereby increasing energy transfer efficiency.

This disclosure is directed to devices, integrated circuits, and methods for sensing radiation. In one example, a device includes an oscillator, configured to deliver a signal via an output at intervals defined by an oscillation frequency, and a counter, connected to the output of the oscillator and configured to count a number of times the comparator delivers the output signal. The oscillator includes a radiation-sensitive cell that applies a resistance. The resistance of the radiation-sensitive cell is configured to vary in response to incident radiation, wherein the oscillation frequency varies based at least in part on the resistance of the radiation-sensitive cell.