The present invention provides a far infrared (FIR) sensor device formed on a substrate, wherein the FIR sensor device includes: a sensor region, which is formed on the substrate, and is configured to operably sense a far infrared signal; and a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer.

A chip structure is provided. The chip structure includes a chip wafer unit and a color conversion layer substrate unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting functional layers. The color conversion layer substrate unit includes a color conversion layer arranged on the light-exit side of the chip wafer unit. The chip wafer unit further includes a first bonding layer, arranged between the sub-pixel light-emitting functional layers and the color conversion layer, and configured to bond the chip wafer unit and the color conversion layer substrate unit.

A camera having an integrated dewar cooler assembly (IDCA) with an optical window, and a reduced dark current photodetector disposed within the IDCA to receive light passing through the optical window. The photodetector comprising a semiconductor photo absorbing layer, a semiconductor barrier layer having a thickness and a first side adjacent a side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting an energy gap in relation to the conduction band of the photo absorbing layer, and a contact area comprising a doped semiconductor, the contact area is adjacent a second side of the barrier layer opposing the first side. The energy gap and/or the thickness of the of the barrier layer is sufficient to minimize charge carriers tunneling and thermalization.

The power consumption of a display device is reduced. The power consumption of a driver circuit in a display device is reduced. A pixel included in the display device includes a display element. The pixel is configured to have a function of retaining a first voltage corresponding to a first input pulse signal and a function of driving the display element with a third voltage obtained by addition of a second voltage corresponding to a second input pulse signal to the first voltage.

The present disclosure provides a growth method and structure of LED epitaxy. The growth method of LED epitaxy comprises: providing a layer of substrate, wherein the substrate is an Al.sub.2O.sub.3 substrate or an Al.sub.2O.sub.3/SiO.sub.2 composite substrate; successively depositing and growing a SiC buffer layer and a u-GaN layer on the substrate; wherein the temperature used for depositing the SiC buffer layer is 6501550 degrees; the gas used for depositing the SiC buffer layer is a silicon source gas and a carbon source gas, a flow rate of the silicon source gas is 11000 sccm, and a flow rate of the carbon source gas is 11000 sccm; a gas carrier gas used for depositing the SiC buffer layer has a flow rate of 10500 slm; the SiC buffer layer is deposited at a pressure of 100700 torr; the SiC buffer layer is deposited for a thickness of 101000 A.

A method of fabricating an LED light plate, an LED light plate, and a display device are disclosed. The method includes: disposing a functional layer on each LED chip to form multiple chips to be transferred; placing the chips into a receiving tank filled with a suspension; defining a plurality of grooves matching the shape of the functional layer in the transport substrate; placing the transport substrate into the suspension so that a first electrode in each receiving tank faces each second electrode in the respective groove and that each chip is located between the first electrode and the respective second electrode; energizing the first electrode and each second electrode, so that each chip is absorbed by the transporting substrate, and each functional layer is moved into the respective groove; and transplanting the multiple chips onto a target substrate; where each functional layer is filled with multiple charged particles.

A mass transfer method for LED lamp beads, including: providing a growth substrate, the growth substrate includes a first substrate and an LED lamp bead array disposed on one surface of the first substrate, LED lamp beads of the LED lamp bead array are connected to the first substrate through a release layer; providing a driver circuit substrate, the driver circuit substrate includes a second substrate and a lamp mount array disposed on one surface of the second substrate, the lamp mount array is matched with the LED lamp bead array; moving the growth substrate to a position above the driver circuit substrate, and rotating the growth substrate and/or the driver circuit substrate so that the LED lamp bead array is aligned with the lamp mount array; and evaporating the release layer and removing the first substrate.

Disclosed are structures and methods of forming the structures so as to have a photodetector isolated from a substrate by stacked trench isolation regions. In one structure, a first trench isolation region is in and at the top surface of a substrate and a second trench isolation region is in the substrate below the first. A photodetector is on the substrate aligned above the first and second trench isolation regions. In another structure, a semiconductor layer is on an insulator layer and laterally surrounded by a first trench isolation region. A second trench isolation region is in and at the top surface of a substrate below the insulator layer and first trench isolation region. A photodetector is on the semiconductor layer and extends laterally onto the first trench isolation region. The stacked trench isolation regions provide sufficient isolation below the photodetector to allow for direct coupling with an off-chip optical fiber.

A self-balancing optical position sensitive detector includes a pair of spaced apart, parallel, longitudinally extending doped regions on a first surface on a front side of a substrate 16 of opposite doping type with contact pads on the front side at respective ends of a first doped region of the pair. A voltage source applies a potential difference between the contact pads of the first doped region. On the front side, a contact pad of the second doped region of the pair provides an analog output signal representative of a longitudinal position of a center of gravity of an incident light pattern along the doped regions without external circuitry processing the output signal to obtain a readout of the longitudinal position. A resistive line may directly overly, abut and be in contact with at least a portion of the first doped region. A conductive line may directly overly, abut and be in contact with at least a portion of the second doped region. No backside contact or processing of the substrate is required or employed.

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.