A diode comprises a p-doped region, an n-doped region, and a light-sensitive intrinsic region sandwiched laterally between the p-doped region and the n-doped region in a direction transverse to a direction of light propagation in the diode. The p-doped region is made of a first material doped with a first type of dopant and the n-doped region is made of a third material doped with a second type of dopant. The first material includes Si or SiGe. The third material includes Si or SiGe. The intrinsic region is made of a second material, that includes Ge, GeSn, or SiGe. The intrinsic region has a maximal lateral extension between two lateral ends of the intrinsic region of equal to or below 400 nm. The p-doped region and the n-doped region are in-situ doped such that the intrinsic region is not doped when the diode is produced.

The present disclosure relates to a photodiode and method of forming the photodiode. The photodiode includes a doped layer and an absorption region positioned on the doped layer. The absorption region includes a base region contacting the doped layer, a first facet region positioned on the base region, and a second facet region positioned on the first facet region. The first facet region includes (i) a first tapered surface and a second tapered surface extending from the base region and (ii) a first step region and a second step region extending laterally from the first tapered surface and the second tapered surface, respectively. The second facet region includes a third tapered surface extending from the first step region and a fourth tapered surface extending from the second step region.

Embodiments of the present disclosure provide a photodetector, comprising a waveguide structure, a light limiting structure, and an absorption structure. The waveguide structure extends into the light limiting structure, and a first edge where a first side wall of the waveguide structure is located is tangent to a second edge where a second side wall of the light limiting structure is located. The waveguide structure is used for introducing incident light into the light limiting structure in a direction tangent to the first edge. The introduced light is limited in the light limiting structure for annular transmission by means of total reflection of a side wall of the light limiting structure, and the introduced light is coupled into the absorption structure by means of the light limiting structure. The absorption structure is located on the light limiting structure. The coupled light is limited in the absorption structure in the horizontal direction for annular transmission by means of total reflection of a side wall of the absorption structure, and the coupled light is converted into electrons and holes.

An image sensor pixel includes first, second and third PIN photodiodes having respective first, second and third widths, which are unequal to each other, and respective first, second and third absorption spectra associated therewith, which are unequal to each other. The first absorption spectra is a first linear combination of three color matching functions divided by a wavelength of light incident the image sensor, the second absorption spectra is a second linear combination of the three color matching functions divided by a wavelength of light incident the image sensor, and the third absorption spectra is a third linear combination of the three color matching functions divided by a wavelength of light incident the image sensor.

A semiconductor light receiving device (1) has a light receiving portion (6) with a light absorbing layer (4) on a first surface (2a) side of a semiconductor substrate (2) transparent to incident light in an infrared range for optical communications, a reflecting portion (11) in a region where light that was incident on the light receiving portion (6) and passed through the light absorbing layer (4) is reached on a second surface (2b) side opposite the first surface (2a) to reflect the light toward the second surface (2b), and end surfaces (2c, 2d) of the semiconductor substrate (2), where light reflected by the reflecting portion (11) and reflected by the second surface (2b) reaches, are formed as a rough surface having roughness with a height equal to or greater than the wavelength of the incident light.

A PIN diode detector includes a substrate. The PIN diode detector further includes a plurality of PIN diode wells in a pixel region, wherein each of the plurality of PIN diode wells has a first dopant type. The PIN diode detector further includes a connecting ring well and a plurality of floating ring wells in a peripheral region, wherein the connecting ring well and plurality of floating ring wells have the first dopant type. The PIN diode detector further includes a field stop ring well surrounding the plurality of floating ring wells, wherein the field stop ring well has a second dopant type opposite the first dopant type. The PIN diode detector further includes a blanket doped region. The blanket doped region extends continuously through an entirety of the pixel region and an entirety of the peripheral region, and the blanket doped region has the second dopant type.

A PIN diode detector includes a substrate. The PIN diode detector further includes a plurality of PIN diode wells in a pixel region, wherein each of the plurality of PIN diode wells has a first dopant type. The PIN diode detector further includes a connecting ring well and a plurality of floating ring wells in a peripheral region, wherein the connecting ring well and plurality of floating ring wells have the first dopant type. The PIN diode detector further includes a field stop ring well surrounding the plurality of floating ring wells, wherein the field stop ring well has a second dopant type opposite the first dopant type. The PIN diode detector further includes a blanket doped region. The blanket doped region extends continuously through an entirety of the pixel region and an entirety of the peripheral region, and the blanket doped region has the second dopant type.

An optical subsystem with flat lenses for multimode transceivers is provided. The optical subsystem includes a photonic integrated circuit (PIC). The optical subsystem also includes a vertical cavity surface emitting laser (VCSEL) disposed on the PIC, a photodetector disposed on the PIC, a transmit multimode fiber (TX-MMF) disposed on the PIC, and a receiver multimode fiber (RX-MMF) disposed on the PIC. The PIC includes a substrate, an oxide layer disposed above the substrate, and a plurality of metalenses disposed in the oxide layer. The substrate includes a polymer region and a mirror disposed at a base of the polymer region.

The disclosure provides a photoelectric detector. The photoelectric detector includes a waveguide layer, an absorption layer, and a cladding material. The absorption layer is located on an upper surface of the waveguide layer or at least partially embedded in the waveguide layer. The cladding material covers top portions and side walls of the waveguide layer and the absorption layer. At least one end surface of the photoelectric detector is a light incident surface, and a thickness of an end surface of the absorption layer adjacent to the light incident surface is smaller than a thickness of other portions.

A photodetector, comprising a flat slab structure (1), a waveguide structure (6), a light trapping structure (2), an absorption structure (3), a first electrode structure (4) and a second electrode structure (5), wherein the waveguide structure (6) extends into the light trapping structure (2), and a first edge where a first side wall of the waveguide structure (6) is located is tangent to a second edge where a second side wall in outer side walls of the light trapping structure (2) is located; the waveguide structure (6) is used for guiding incident light into the light trapping structure (2) in a direction tangent to the second edge; the guided light is trapped in the light trapping structure (2) by means of total internal reflection of the side walls of the light trapping structure (2) for annular transmission, and the guided light is coupled into the absorption structure (3) by means of the light trapping structure (2); the first electrode structure (4) is located in the light trapping structure (2); the first electrode structure (4) and the second electrode structure (5) are used for collecting electrons or holes transmitted along the absorption structure (3) and the light trapping structure (2); the types of current carriers collected by the first electrode structure (4) and the second electrode structure (5) are different.