A photoelectric conversion apparatus includes a pulse shaping circuit that shapes an output from a diode of avalanche amplification type into a pulse, and a pulse conversion circuit that converts a pulse signal output from the pulse shaping circuit. The pulse conversion circuit converts a pulse signal having a first amplitude and output from the pulse shaping circuit into a pulse signal having a second amplitude smaller than the first amplitude.

A light detecting device includes first pixel circuitry including a first avalanche photodiode, and second pixel circuitry including a second avalanche photodiode, a first delay circuit including an input coupled to a cathode of the second avalanche photodiode, a first circuit including a first input coupled to the cathode of the second avalanche photodiode, and a second input coupled to an output of the first delay circuit. The light detecting device includes a control circuit coupled to an output of the first circuit and configured to control a potential of an anode of the first avalanche photodiode based on the output of the first circuit. The control circuit is configured to control a potential of an anode of the second avalanche photodiode based on the output of the first circuit.

In a light detection device and a distance measuring system that obtain a distance from a round-trip time of light, a distance measurement error is reduced while a dead time is shortened. A logic gate outputs an output signal on the basis of a result of comparison between an input voltage depending on a voltage of one terminal of the cathode or the anode of an avalanche photodiode and a predetermined threshold voltage. A voltage limiting transistor limits the input voltage. A rapid charging transistor, in which a film thickness of a gate oxide film is less than that of the voltage limiting transistor, supplies a charging current to the avalanche photodiode in accordance with a predetermined pulse signal. A pulse generation unit generates the pulse signal on the basis of the output signal and supplies the pulse signal to the rapid charging transistor.

Provided are a semiconductor device and a distance measuring device capable of reducing parasitic inductance between a plurality of substrates. The semiconductor device of the present disclosure includes: a first substrate including a semiconductor element, a first electrode provided on the semiconductor element, and a second electrode extending in a first direction in plan view; a second substrate including a wiring extending in a second direction parallel to the first direction in plan view, a transistor electrically connected to the wiring, and a capacitor electrically connected to the wiring; a first connection portion electrically connecting the first electrode and the second substrate; and a second connection portion electrically connecting the second electrode and the second substrate.

An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

The invention relates to an image sensor comprising a photodetector array including neighboring photodetector elements, each photodetector element comprising: a photodetector cell having a photodiode and a reset unit; a cell control unit coupled with the photodetector cell and configured to reset the photodiode by means of the reset unit; wherein the cell control unit is configured to asynchronously effect resetting of the photodiode after a given dead time after detection of a photon.

A LIDAR system comprises a chaotic signal generating device, a signal transmitting device and a signal processing system sequentially coupled in series. The chaotic signal generating device is configured to generate a chaotic signal and comprises a feedback device and a laser generator configured to generate a laser signal. The feedback device is configured to receive the laser signal, generate the chaotic signal and a feedback signal according to a laser signal, and transmit the adjusted feedback signal to the laser generator. The signal transmitting device is configured to receive the chaotic signal, so as to generate a reference signal and detection signal, wherein the detection signal is transformed into a reflected signal after being reflected by an obstacle. The signal processing system is configured to receive the reference signal and the reflected signal, so as to determine a delay time by using a frequency domain phase modulation algorithm.

A method of making a single-photon detector includes growing an epitaxial multi-layer structure that includes a buffer layer, an absorption layer, a transition layer, a field control charge layer, a multiplication layer, an inversion layer, a migration layer, a window layer, and an Ohmic contact layer sequentially on a substrate. A curved diffusion region is formed in the window layer and the Ohmic contact layer via a diffusion process. A mesa structure is formed by etching the epitaxial multi-layer. A light input window is formed on the substrate. A p-type electrode is formed on the Ohmic contact layer, and an n-type electrode is formed on the substrate. The inversion layer provides supplementary regulation of an electric field distribution that is regulated by the field control charge layer. A single-photon detector made from the method, and a single-photon detector array made with a multitude of the single-photon detectors are also provided.

An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

A method of building a moving average histogram of photon times of arrival includes, for each time interval in first and second subsets of time intervals, latching a time reference corresponding to a time of receipt of an avalanche timing output signal of a single-photon avalanche diode (SPAD), and advancing a count stored at a memory address corresponding to the latched time reference. The memory address corresponds to a range of time references. The method further includes reading and clearing a first set of counts after the first subset of time intervals; phase-shifting the sequence of time references with respect to a set of memory addresses after the first subset of time intervals; reading and clearing a second set of counts after the second subset of time intervals; and building the moving average histogram using at least the first and second sets of counts.