H10F30/227

SCHOTTKY-BARRIER PHOTODETECTOR DEVICE WITH GERMANIUM AND IMAGE SENSOR INCLUDING THE PHOTODETECTOR DEVICE

A photodetector device includes a germanium semiconductor layer including a plurality of nanostructures at an upper surface of the germanium semiconductor layer, a conductive layer on the plurality of nanostructures, the conductive layer and the germanium semiconductor layer forming a first Schottky junction, and a tunneling barrier layer between the germanium semiconductor layer and the conductive layer.

Optical device, photoelectric converter, and fuel generator

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an oxide layer which is in contact with the nanostructure body, an alloy layer which is in contact with the oxide layer and which is made of an alloy containing a first metal and a second metal that are different in work function from each other, and an n-type semiconductor which is in Schottky contact with the alloy layer.

Optical device, photoelectric converter, and fuel generator

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an oxide layer which is in contact with the nanostructure body, an alloy layer which is in contact with the oxide layer and which is made of an alloy containing a first metal and a second metal that are different in work function from each other, and an n-type semiconductor which is in Schottky contact with the alloy layer.

Light detection device

A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

Semiconductor device for a system for measuring the temperature, and manufacturing method thereof

A semiconductor device for a system for measuring temperature, which includes a first UV detector and a second UV detector. The first and second UV detectors generate a first current and a second current, respectively, as a function of the irradiance in the ultraviolet band. Moreover, the first and second UV detectors have coefficients of variation of the current with temperature, at constant irradiance, that are different from one another.

MULTI-SENSOR OPTICAL DEVICE FOR DETECTING CHEMICAL SPECIES AND MANUFACTURING METHOD THEREOF
20170236851 · 2017-08-17 ·

An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

MULTIBAND DOUBLE JUNCTION PHOTODIODE AND RELATED MANUFACTURING PROCESS
20170207360 · 2017-07-20 ·

A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

SEMICONDUCTOR DEVICE
20170179185 · 2017-06-22 ·

A semiconductor device is disclosed, which includes: at least one device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands.

Multiband double junction photodiode and related manufacturing process

A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

Multi-sensor optical device for detecting chemical species and manufacturing method thereof

An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.