Disclosed herein are tritium detection devices and methods of making and use thereof. For example, disclosed herein are tritium detection devices comprising: a tritium detection region comprising a tritium absorption layer and an anti-diffusion layer; a Schottky contact region comprising a Schottky contact layer; a semiconductor layer, the semiconductor layer being a layer comprising a semiconductor; an epitaxial semiconductor layer, the epitaxial semiconductor layer being an epitaxial layer of the semiconductor; and an Ohmic contact layer.

The present disclosure provides a silicon-based infrared band avalanche photodetector and a fabrication method thereof. The photodetector includes a bottom electrode layer, a silicon film layer, and a top metal film layer stacked sequentially, where the bottom electrode layer forms an ohmic contact with the silicon film layer, and the top metal film layer forms a Schottky contact with the silicon film layer. The photodetector absorbs near-infrared light through the top metal film layer, generates hot carriers, and injects the hot carriers into the silicon film layer, and the hot carriers are collected by the bottom electrode layer to form a photocurrent, thereby achieving the detection of infrared light with energy below a band gap of silicon. Moreover, broadband or narrowband optical high absorption at different infrared wavelengths can be achieved by adjusting a thickness of the silicon film layer and a type of the top metal film layer.

A radiation detection device includes at least one heterojunction Schottky barrier diode (HSBD). The at least one HSBD includes at least one boron-doped diamond layer located on top of at least one epitaxial layer, the epitaxial layer located on top of at least one buffer layer, and the buffer layer located on top of a bulk substrate layer. At least one contact layer is located on a side of the bulk substrate layer opposite the epitaxial layer.

A photodiode according to an embodiment includes a semiconductor substrate, a Schottky junction structure layer disposed on the semiconductor substrate and including a first layer including a conductive material and a semiconductor layer, and a pinning layer disposed adjacent to the Schottky junction structure layer and fixing potentials of the semiconductor substrate and the first layer.

Embodiments of present disclosure relates to a method and a device for fabricating photodetector. The device is configured to receive a substrate of a predefined dimension based on user requirement for fabricating the photodetector. The device is configured to develop a first electrode and a second electrode on the substrate. The device is configured to generate a predefined range of micrometer gap between the first electrode and the second electrode. The device is configured to cast the predefined range of micrometer gap using a light-sensitive metal-oxide material. Thus, the present disclosure is able to generate a photodetector at low-cost and reduced fabrication time.