Provided are a nanostructure and an optical device including the nanostructure. The nanostructure is formed on a two-dimensional material layer such as graphene and includes nanopatterns having different shapes. The nanopatterns may include a first nanopattern and a second nanopattern and may be spherical; cube-shaped; or poly-pyramid-shaped, including a triangular pyramid shape; or polygonal pillar-shaped.

The pixel circuit according to an embodiment of the present disclosure may include: a display driving module, arranged to compensate for the voltage threshold of the driving transistor by a data signal inputted by the data line and a first signal inputted by the first signal source in a time period, which is under a control of a first scanning signal inputted by the first scanning line, a second scanning signal inputted by the second scanning line, and a control signal inputted by the control line, so that a light-emitting driving signal of the OLED is independent of the voltage threshold of the driving transistor, within a fourth stage of the time period; and an in-cell touch detection module, arranged to detect a touch signal of a touch screen based on a variation of light caused by a touch operation in the time period, which is under the control of the first scanning signal and the control signal.

A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.

A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.

A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light.

Provided are a nanostructure and an optical device including the nanostructure. The nanostructure is formed on a two-dimensional material layer such as graphene and includes nanopatterns having different shapes. The nanopatterns may include a first nanopattern and a second nanopattern and may be spherical; cube-shaped; or poly-pyramid-shaped, including a triangular pyramid shape; or polygonal pillar-shaped.

A method of manufacturing a UV phototransistor and a UV transistor manufactured according to the same are disclosed herein. The method includes mixing a solvent comprising 2-methoxyethanol, 2-ethoxyethanol, and ethylene glycol with an oxide semiconductor to prepare a photoactive solution; applying the prepared photoactive solution onto a substrate to form a photoactive layer, and forming electrodes spaced apart on the photoactive layer.

A method of manufacturing a UV phototransistor and a UV transistor manufactured according to the same are disclosed herein. The method includes mixing a solvent comprising 2-methoxyethanol, 2-ethoxyethanol, and ethylene glycol with an oxide semiconductor to prepare a photoactive solution; applying the prepared photoactive solution onto a substrate to form a photoactive layer, and forming electrodes spaced apart on the photoactive layer.

An ultraviolet detecting silicon carbide junction field effect transistor with a transistor gate junction positioned proximate to the outer surface to receive ultraviolet: light and flow an ultraviolet light induced photo current when reverse biased.

A differential amplifier includes an unmatched pair, including first quantum dots and second quantum dots, and a matched pair, including first and second phototransistors. The unmatched pair has a difference between a first spectrum absorbed by the first quantum dots and a second spectrum absorbed by the second quantum dots. Each of the first and second phototransistors includes a channel. The first quantum dots absorb the first spectrum from incident electromagnetic radiation and gate a first current through the channel of the first phototransistor, and the second quantum dots absorb the second spectrum from the incident electromagnetic radiation and gate a second current through the channel of the second phototransistor. The first and second phototransistors are coupled together for generating a differential output from the first and second currents, the differential output corresponding to the difference between the first and second spectrums within the incident electromagnetic radiation.