Example photoconductive devices and example methods for using photoconductive devices are described. An example method may include providing a photoconductive device having a metal-semiconductor-metal structure. The method may also include controlling, based on a first input state, illumination of the photoconductive device by a first optical beam during a time period, and controlling, based on a second input state, illumination of the photoconductive device by a second optical beam during the time period. Further, the method may include detecting an amount of current produced by the photoconductive device during the time period, and based on the detected amount of current, providing an output indicative of the first input state and the second input state. The example devices can be used individually as discrete components or in integrated circuits for memory or logic applications.

Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer. The nanostructure layer may include one or more quantum dots. The semiconductor layer may include an oxide semiconductor. The photoelectric device may include a first electrode and a second electrode that contact different regions of the photoactive layer. A number of the photoelectric conversion elements may be arranged in a horizontal direction or may be stacked in a vertical direction. The photoelectric conversion elements may absorb and thereby detect light in different wavelength bands without the use of color filters.

Example photoconductive devices and example methods for using photoconductive devices are described. An example method may include providing a photoconductive device having a metal-semiconductor-metal structure. The method may also include controlling, based on a first input state, illumination of the photoconductive device by a first optical beam during a time period, and controlling, based on a second input state, illumination of the photoconductive device by a second optical beam during the time period. Further, the method may include detecting an amount of current produced by the photoconductive device during the time period, and based on the detected amount of current, providing an output indicative of the first input state and the second input state. The example devices can be used individually as discrete components or in integrated circuits for memory or logic applications.

A monolithic Opto-MOSFET relay and manufacturing method thereof are provided. The manufacturing method of the monolithic Opto-MOSFET relay involves using a low ion doping concentration substrate. In this method, a first P-N junction structure, a second P-N junction structure, and an N-P-N junction structure are formed within an epitaxial layer. Dry etching is employed to divide the epitaxial layer into a high-voltage region and a low-voltage region, which are electrically isolated from the each other. Subsequently, an isolation layer is deposited on the epitaxial layer, and photomask etching is performed to generate multiple patterns. A metal layer is then deposited to form a light emitting diode (LED) based on the pattern within the first P-N junction structure, a photodiode within the second P-N junction structure, and at least one MOSFET within the N-P-N junction structure.

An electro-optical device can include a plurality of nanocrystals positioned between a first electrode and a second electrode.

Example photoconductive devices and example methods for using photoconductive devices are described. An example method may include providing a photoconductive device having a metal-semiconductor-metal structure. The method may also include controlling, based on a first input state, illumination of the photoconductive device by a first optical beam during a time period, and controlling, based on a second input state, illumination of the photoconductive device by a second optical beam during the time period. Further, the method may include detecting an amount of current produced by the photoconductive device during the time period, and based on the detected amount of current, providing an output indicative of the first input state and the second input state. The example devices can be used individually as discrete components or in integrated circuits for memory or logic applications.

A backside illuminated image sensor device structure and methods for forming the same are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer. The nanostructure layer may include one or more quantum dots. The semiconductor layer may include an oxide semiconductor. The photoelectric device may include a first electrode and a second electrode that contact different regions of the photoactive layer. A number of the photoelectric conversion elements may be arranged in a horizontal direction or may be stacked in a vertical direction. The photoelectric conversion elements may absorb and thereby detect light in different wavelength bands without the use of color filters.

One embodiment according to the present disclosure is an imaging apparatus including pixels. The pixel includes a junction type field effect transistor (JFET) provided in a semiconductor substrate. The JFET includes a gate region and a channel region. An orthogonal projection of the gate region onto a plane parallel to a surface of the semiconductor substrate intersects an orthogonal projection of the channel region onto the plane. Each of a source-side portion of the orthogonal projection of the channel region and a drain-side portion of the orthogonal projection of the channel region protrudes out of the orthogonal projection of the gate region.

A compact collision detector can be configured for low power operation to facilitate collision avoidance. In one embodiment, a nanoscale collision detector can be based on a photodetector, stacked on top of a non-volatile and programmable memory architecture that imitates the escape response of LGMD neuron at a frugal energy expenditure of few nanojoules (nJ) and at the same time can offer orders of magnitude benefit in device footprint (e.g. by having a relatively small size). Embodiments of the collision detector can be utilized in smart, low-cost, task-specific, energy efficient and miniaturized collision detection systems configured for collision avoidance.