Provided herein is a digital x-ray detector and a method for repairing a bad pixel thereof, the detector including a substrate; a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain; a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode; a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer; a bias line connected to the upper electrode of the PIN diode; and a scintillator arranged above the PIN diode, wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode.

Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.

The present invention provides an invisible light flat plate detector and a manufacturing method thereof, an imaging apparatus, relates to the field of detection technology, can solve problems that the structure of the invisible light flat plate detector in the prior art is complex and the manufacturing method thereof is tedious. The invisible light flat plate detector of the present invention comprises a plurality of detection units and an invisible light conversion layer provided above the detection units for converting invisible light into visible light, each of the detection units comprising a thin film transistor provided on a substrate, and a first insulation layer, a first electrode, a semiconductor photoelectronic conversion module, a second electrode which are successively provided above the thin film transistor and of which projections on the substrate at least partially overlap with a projection of the thin film transistor on the substrate.

Provided herein is a digital x-ray detector and a method for repairing a bad pixel thereof, the detector including a substrate; a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain; a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode; a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer; a bias line connected to the upper electrode of the PIN diode; and a scintillator arranged above the PIN diode, wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode.

In an embodiment a semiconductor detector includes a doped semiconductor body with a detection region, a front side and a rear side opposite the front side, a first electrical ring electrode and a second electrical ring electrode arranged around a read-out point on the front side, wherein the ring electrodes are configured to generate an electric field profile in the semiconductor body to guide free charge carriers to the read-out point, the ring electrodes overlapping at least partially with the detection region, as seen in plan view of the front side, a passivation layer arranged on the front side in a direction parallel to the front side between the first ring electrode and the second ring electrode and a first doped layer extending along the front side and electrically conductively connecting the first ring electrode to the second ring electrode without interruptions, wherein the first doped layer and a rest of the semiconductor body are oppositely doped to each other, and wherein a specific resistance of the first doped layer is between 1 cm and 1000 cm, inclusive.

Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.

In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.

Provided herein is a digital x-ray detector and a method for repairing a bad pixel thereof, the detector including a substrate; a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain; a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode; a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer; a bias line connected to the upper electrode of the PIN diode; and a scintillator arranged above the PIN diode, wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode.

Provided herein is a digital x-ray detector wherein a plurality of sensing pixels are formed in a matrix structure, and wherein a pin structure positioned in an odd number line and a pin structure positioned in an even number line are not formed in the same process, thereby preventing a line detect by a particle.

The present application is directed to a solid state device for detecting neutrons. The device includes a semiconductor substrate having pores. The device also includes a p- or n-type doping layer formed on a surface of the pores. Moreover, a layer of fill material is formed on the p- or n-type doping layer. The present application also is directed to a method of making a solid state device. Further, the present application is directed to a method of detecting efficiency of solid state detector devices.