A photoelectric packaging structure, and a preparation method of the photoelectric packaging structure, and a camera module having the photoelectric packaging structure are provided. The photoelectric packaging structure includes a substrate module and a photosensitive chip. The substrate module includes a substrate, and the substrate module defines a plurality of channels. The photosensitive chip is located on the substrate, and includes a photosensitive area and a non-photosensitive area connected to the photosensitive area. Two ends of each of the channels extend to the substrate and the non-photosensitive area, respectively. A conductive layer is formed on an inner wall of each of the channels to form a hollow conductive channel. The hollow conductive channel is electrically connected to the substrate and the non-photosensitive area.

A semiconductor device, a manufacturing method therefor, and an electronic apparatus that reduces a parasitic capacitance generated between an internal electrode and a board silicon to suppress waveform distortion and signal delay of high-frequency signals, thereby enabling a high-speed operation. A configuration to include: a board silicon; a silicon oxide film stacked on the board silicon; an inter-wiring-layer film having an internal electrode stacked on the silicon oxide film; a through-hole forming a stepped hole with a larger-diameter hole extending from the board silicon to the silicon oxide film and a smaller-diameter hole extending from the silicon oxide film to the internal electrode; an interlayer dielectric film stacked on a circumferential side surface of the larger-diameter hole and the board silicon; and a redistribution layer on an inner peripheral surface of the through-hole and the interlayer dielectric film and connected to the internal electrode.

An image sensor includes a substrate, a global shutter component, a ground doped region, and a light-shielding layer. The substrate at least has a pixel array region and a border region adjacent to each other. The global shutter component is located on the pixel array region, and the global shutter component includes a storage node. The ground doped region is located on the border region. The light-shielding layer is located on the pixel array region and the border region and is electrically connected to the ground doped region. The light-shielding layer includes a first light-shielding layer and a second light-shielding layer. The first light-shielding layer is located on the pixel array region and covers the storage node, and the second light-shielding layer is located on the border region and surrounds the global shutter component. A manufacturing method of an image sensor is also provided.

Provided are systems, methods, and apparatuses for non-scattering nanostructures of silicon pixel image sensors. In one or more examples, the systems, devices, and methods include forming a metal layer on a substrate layer of the pixel, the metal layer to reflect electromagnetic radiation incident on the pixel; forming a photodetector on a silicon layer of the pixel, the photodetector to generate photoelectrons based on the electromagnetic radiation; and forming a passivation layer over the silicon layer, the passivation layer including a thin film dielectric. In one or more examples, the systems, devices, and methods include forming a nanostructure on the passivation layer, the nanostructure to allow the electromagnetic radiation to pass through the nanostructure and steer the electromagnetic radiation linearly towards the photodetector, and forming a microlens on the nanostructure, the microlens including at least one of a flat coat layer or a curved lensing layer.

An image sensing module manufacturing method includes steps: forming a mold and then disposing a plurality of lenses into a barrel of the mold; after confirming the position of the plurality of lenses, adhesively combining the plurality of lenses; installing an image sensor inside the barrel; fixing the image sensor after confirming the position relationship between the plurality of lenses and the image sensor; and cutting the mold to obtain a plurality of image sensing modules.

An image sensor structure including an image stack disposed over a device stack. The image stack includes a plurality of light detectors. A first optical filter stack is disposed over the image stack. The first optical filter stack includes a light guide layer. Light pipe cavities are disposed in the light guide layer. Each light pipe cavity is associated with a light detector. Each light pipe cavity has an aspect ratio that is greater than about 2.5 to about 1. A nanowell layer is disposed over the first optical filter stack. Nanowells are disposed in the nanowell layer. Each nanowell is associated with a light detector.

Generation of outgassing is restrained to restrain deterioration in optical properties of a cover glass. A method for manufacturing an electronic device includes baking step of heating the cover glass on which an antireflection layer made of a cured product of a light-curing resin has been formed, an assembling step of installing the cover glass after the baking step at a position opposed to a light receiving surface of a sensor element to assemble a sensor module, and a reflow step of placing the sensor module on a mounting substrate and applying heat at a temperature of more than or equal to 250 C. to solder the sensor module to the mounting substrate. The baking step is performed before the reflow step to make a rate of generation of outgassing derived from a monomer having a monofunctional (meth)acryloyl group in outgassing generated from the antireflection layer of the cover glass in the reflow step less than or equal to 0.5% by mass relative to a mass of the antireflection layer.

Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.

An imaging device according to an embodiment of the present disclosure includes: a semiconductor substrate having a first surface and a second surface opposed to each other, the semiconductor substrate including a plurality of pixels disposed in a matrix, and a plurality of photoelectric converters that each generates, through photoelectric conversion, electric charge corresponding to an amount of received light for each of the pixels; a plurality of color filters provided on a side of the first surface in respective ones of the plurality of pixels; a plurality of condensing lenses provided on a light incident side of the plurality of color filters in the respective ones of the plurality of pixels; and a separation wall provided between the plurality of color filters adjacent to each other on the side of the first surface, the separation wall having a line width on the light incident side narrower than the line width of the separation wall on the side of the first surface.

An image sensor includes: a first substrate including: a first side, a second side, a pixel array region, and an edge region; and a micro lens array on the second side, which includes micro lenses. Each of the micro lenses includes a first lens layer and a second lens layer on the first lens layer. A second mean curvature radius of the second lens layer is smaller than a first mean curvature radius of the first lens layer. A first eccentric degree of the second lens layer on an edge of the pixel array region is greater than a second eccentric degree of the second lens layer at a center of the pixel array region.