An image sensing module manufacturing method includes steps: forming a mold and then disposing a plurality of lenses into a barrel of the mold; after confirming the position of the plurality of lenses, adhesively combining the plurality of lenses; installing an image sensor inside the barrel; fixing the image sensor after confirming the position relationship between the plurality of lenses and the image sensor; and cutting the mold to obtain a plurality of image sensing modules.

A method for protecting active layers of electronic chips including the following successive steps: using a stack comprising, successively: a carrier substrate, a hybrid bonding interface, electronic chips, each comprising successively an active layer, a dielectric layer, and an initial substrate, forming a first encapsulating layer about the electronic chips, removing a part of the initial substrate by grinding and preserving a remaining part, forming a second encapsulating layer about the electronic chips, performing a directional etch of a part of the second encapsulating layer to: superficially expose the remaining part of the initial substrate, and preserve the second encapsulating layer extending over the flanks of the electronic chips, and performing a selective chemical etch of the remaining part of the initial substrate.

A method for manufacturing a semiconductor optical device for a LIDAR sensor system for a vehicle includes (a) forming a plurality of microlens structures at respective first locations on a first major surface of respective first and second semiconductor wafers. The method includes (b) forming a plurality of notch structures at respective second locations on a second major surface of the respective first and second semiconductor wafers, wherein the respective second locations on the second major surface are substantially opposite the respective first locations on the first major surface. The method includes (c) bonding the second major surface of the first semiconductor wafer to the second major surface of the second semiconductor wafer to form a semiconductor wafer pair. The method includes (d) dicing the semiconductor wafer pair to segment the semiconductor wafer pair into a plurality of individual semiconductor optical devices.

An optoelectronic device includes an array of germanium-based photodiodes including a stack of semiconductor layers, made from germanium, trenches, and a passivation semiconductor layer, made from silicon. Each photodiode includes a silicon-germanium peripheral zone in the semiconductor portion formed through an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of the semiconductor portion.

A curved image sensor chip has a first side and a second side opposite the first side. The second side includes light sensors configured to generate electrical signals in response to receiving light. A substrate is in contact with the first side of the curved image sensor chip and is configured to increase in volume so as to apply a bending force to form the curved image sensor chip.

A chip package includes a chip, an insulating layer and a conductive layer. The chip includes a substrate, an epitaxy layer, a device region and a conductive pad. The epitaxy layer is disposed on the substrate, and the device region and the conductive pad are disposed on the epitaxy layer. The conductive pad is at a side of the device region and connected to the device region. The conductive pad protrudes out of a side surface of the epitaxy layer. The insulating layer is disposed below the substrate and extended to cover the side surface of the epitaxy layer. The conductive layer is disposed below the insulating layer and extended to contact the conductive pad. The conductive layer and the side surface of the epitaxy layer are separated by a first distance.

A sensor package that includes a substrate with opposing first and second surfaces. A plurality of photo detectors are formed on or under the first surface and configured to generate one or more signals in response to light incident on the first surface. A plurality of contact pads are formed at the first surface and are electrically coupled to the plurality of photo detectors. A plurality of holes are each formed into the second surface and extending through the substrate to one of the contact pads. Conductive leads each extend from one of the contact pads, through one of the plurality of holes, and along the second surface. The conductive leads are insulated from the substrate. One or more trenches are formed into a periphery portion of the substrate each extending from the second surface to the first surface. Insulation material covers sidewalls of the one or more trenches.

A method of manufacturing an image sensor device includes, in a first manufacturing facility, forming a first set of patterned silicon, metal, and insulating layers on a glass substrate, forming an electrical and mechanical protection layer over the first set of patterned silicon, metal, and insulating layers, and, in a second manufacturing facility, removing the electrical and mechanical protection layer, forming a second set of patterned silicon, metal, and insulating layers over the first set of patterned silicon, metal, and insulating layers, forming a plurality of photosensors in communication with at least the second set of patterned silicon, metal, and insulating layers to form an unpassivated image sensor device, and forming a passivation layer over the unpassivated image sensor device. The materials used in the first set of layers and second set of layers can be completely or partially different.

The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability. A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

An improvement is achieved in the performance of a semiconductor device. A semiconductor device includes an n.sup.-type semiconductor region formed in a p-type well, an n-type semiconductor region formed closer to a main surface of a semiconductor substrate than the n.sup.-type semiconductor region, and a p.sup.-type semiconductor region formed between the n.sup.-type semiconductor region and the n-type semiconductor region. A net impurity concentration in the n.sup.-type semiconductor region is lower than a net impurity concentration in the n-type semiconductor region. A net impurity concentration in the p.sup.-type semiconductor region is lower than a net impurity concentration in the p-type well.