A light sensor structure and a packaging method thereof are disclosed. The light sensor structure comprises a light emitting element, a light sensing element, an opaque molding substance, an insulation layer and a connection layer. The opaque molding substance encloses the light emitting element and the light sensing element, and the opaque molding substance is provided with a via. The insulation layer is disposed on the bottom surface of the light emitting element, and the insulation layer is provided with a number of connection pads on a side away from the light emitting element and the light sensing element. The connection pads are electrically connected to the contacts on the bottom surface of the light emitting element through the connection layer, and the connection pads are electrically connected to the contacts on the light sensing surface of the light sensing element through the connection layer and the via.

Provided is a display device, which includes a flexible display panel including a display region and a peripheral region surrounding the display region; a driver integrated circuit (IC) disposed in the peripheral region; a plurality of detection circuits disposed in the peripheral region and close to the slidable region; at least one input signal line; at least one control signal line and at least one detection signal line.

Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

An array substrate, a manufacturing method of the array substrate, and a display panel are provided. The array substrate includes a photosensitive sensor. The photosensitive sensor includes a photosensitive module and a storage module. The photosensitive module includes a photosensitive semiconductor layer. The storage module includes a first electrode plate and a second electrode plate. Wherein, the photosensitive semiconductor layer is disposed on an extension section of a drain electrode. A number of film layer of the photosensitive sensor is decreased, and photomasks are saved.

An optical sensor system includes a thin-film transistor (TFT) optical panel including an array of TFT pixels, a charge amplifier configured to temporarily store a charge received from a TFT pixel in the array of TFT pixels and generate a voltage based on the temporarily stored charge, an analog-to-digital converter to generate a digitized value based on the voltage, an accumulator configured to store the digitized value, and a controller circuit configured to cause the temporarily stored charge in the charge amplifier to be reset based on one of the voltage and the digitized value.

The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

The present technology relates to a light receiving device and a distance measurement system that enable light to be surely received by a reference pixel. A light receiving device includes a plurality of pixels each including a light receiving element having a light receiving surface, and a light emission source provided on an opposite side of the light receiving surface with respect to the light receiving element. The plurality of pixels includes a first pixel including a light shielding member provided between the light receiving element and the light emission source, and a second pixel including a light guiding unit that is configured to propagate a photon and is provided between the light receiving element and the light emission source. The present technology can be applied to a distance measurement system or the like that detects a distance to a subject in a depth direction, for example, for example.

An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.

A detector device for a microscope includes a multi-element photodetector having a plurality of photodetector elements arranged in a photodetector array. Each photodetector element is configured to output a detector signal upon receiving light. The plurality of photodetector elements is arranged in one or more photodetector groups. Each photodetector group has a signal combiner configured to combine the detector signals of the photodetector elements into a collective output signal of the photodetector group to reduce a dead time thereof. In a case of only one photodetector group, the multi-element photodetector includes an optical distributor configured to distribute the light across the photodetector group; or in a case of more than one photodetector group, the photodetector groups differ from each other with respect to a density at which the photodetector elements are arranged in the respective photodetector group.

A sensor includes an InGaAs photodetector configured to convert received infrared radiation into electrical signals. A notch filter is operatively connected to the InGaAs photodetector to block detection of wavelengths within at least one predetermined band. An imaging camera system includes an InGaAs photodetector configured to convert received infrared radiation into electrical signals, the InGaAs photodetector including an array of photodetector pixels each configured to convert infrared radiation into electrical signals for imaging. At least one optical element is optically coupled to the InGaAs photodetector to focus an image on the array. A notch filter is operatively connected to the InGaAs photodetector to block detection of wavelengths within at least one predetermined band. A ROIC is operatively connected to the array to condition electrical signals from the array for imaging.