A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element including a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with at least one through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the one electrode is exposed out of the one through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of embedding a conductive member in the through hole after the third step.

A laser designator system using modulated CW laser diodes and a conventional high pixel count image sensor array, such as CCD or CMOS array. These two technologies, diode lasers and imaging sensor arrays are reliable, widely used and inexpensive technologies, as compared with prior art pulsed laser systems. These systems are distinguished from the prior art systems in that they filter the laser signal spatially, by collecting light over a comparatively long period of time from a very few pixels out of the entire field of view of the image sensor array. This is in contrast to the prior art systems where the laser signal is filtered temporarily, over a very short time span, but over a large fraction of the field of view. By spatially filtering the signal outputs of the individual pixels, it becomes possible to subtract the background illumination from the illuminated laser spot.

In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

The description relates to lenses. One example can include a refraction element defining a lens axis and a registration element extending from an edge of the refraction element in a direction that is generally parallel to the lens axis.

A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

A solid-state imaging device includes: multiple micro lenses, which are disposed in each of a first direction and a second direction orthogonal to the first direction, focus the incident light into the light-receiving surface; with the multiple micro lenses of which the planar shape is a shape including a portion divided by a side extending in the first direction and a side extending in the second direction being disposed arrayed mutually adjacent to each of the first direction and the second direction; and with the multiple micro lenses being formed so that the depth of a groove between micro lenses arrayed in a third direction is deeper than the depth of a groove between micro lenses arrayed in the first direction, and also the curvature of the lens surface in the third direction is higher than the curvature of the lens surface in the first direction.