Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed.

Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed.

A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 10.sup.13 cm.sup.3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

The present technology relates to a light receiving element, a distance measurement module, and an electronic device that enable signal degradation during charge transfer to be reduced. The light receiving element includes a pixel at least including: a first charge holding unit and a second charge holding unit each of which holds an electric charge generated by a photodiode; a first transfer transistor that transfers the electric charge to the first charge holding unit; and a second transfer transistor that transfers the electric charge to the second charge holding unit, in which the first and second transfer transistors each include a vertical transistor including a vertical gate electrode portion. The present technology can be applied to, for example, a light receiving element that performs distance measurement by an indirect ToF method, and the like.

A sensor that can reduce kTC noise and can be miniaturized is provided. A sensor according to the present embodiment is a sensor including a plurality of pixels, in which each of the pixels includes a semiconductor layer of a first conductivity type having a first surface, a photoelectric conversion section that is provided in the semiconductor layer and converts light incident on the semiconductor layer into a charge, a first channel layer of the first conductivity type that is provided on a side of the first surface in the semiconductor layer, a first gate electrode provided above the first channel layer, and a first capacitor layer of a second conductivity type that is provided below the first channel layer and accumulates the charge.

An imaging system for capturing spatial-omic images of biological tissue samples may include an imaging chamber configured to secure a biological tissue sample placed in the imaging system; a Time Delay and Integration (TDI) imager comprising at least one scan line; a light source configured to illuminate an area on the biological tissue sample that is being captured by the TDI imager; and a controller configured to cause the TDI imager to scan the biological tissue sample using one or more TDI scans of the biological tissue sample.