An electric motor includes a rotor and a stator. The stator includes a first stator segment including a first annular back portion, a first tooth extending radially inward from the first annular back portion, a first flange extending away from the first tooth, a first insulation portion at least partially covering the first annular back portion, the first tooth, and the first flange, and a first coil wound around the first tooth. The stator also includes a second stator segment separate from the first stator segment and axially coupled to the first stator segment, the second stator segment including a second annular back portion, a second tooth extending radially inward from the second annular back portion, a second flange extending away from the second tooth and toward the first flange, a second insulation portion at least partially covering the second annular back portion, the second tooth, and the second flange.

A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.

A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.

A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

An image sensor includes a lower substrate including logic circuits and an upper substrate including pixels. Transistors provided on the upper substrate have the same conductivity type. Each of the transistors includes source/drain regions provided in the upper substrate, an upper gate electrode provided on the upper substrate, and a silicon oxide layer disposed between the upper substrate and the upper gate electrode. The silicon oxide layer is in physical contact with the upper substrate and the upper gate electrode.

An optical sensor device may include a set of optical sensors. The optical sensor device may include a substrate. The optical sensor device may include a multispectral filter array disposed on the substrate. The multispectral filter array may include a first dielectric mirror disposed on the substrate. The multispectral filter array may include a spacer disposed on the first dielectric mirror. The spacer may include a set of layers. The multispectral filter array may include a second dielectric mirror disposed on the spacer. The second dielectric mirror may be aligned with two or more sensor elements of a set of sensor elements.

A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.

An imaging sensor includes a color filter, and DBPF that has a transmission characteristic in a visible-light band, a blocking characteristic in a first wavelength band adjacent to a long-wavelength side of the visible-light band, and a transmission characteristic in a second wavelength band that is a part of the first wavelength band. A transmission characteristic of DBPF and a transmission characteristic of each filter part of the color filter are set in such a manner that the second wavelength band of DBPF is included in a third wavelength band that is a wavelength band in which transmittance of the filter parts in colors is approximate to each other on a long-wavelength side of the visible-light band and a fourth wavelength band that is a wavelength band in which a filter part for infrared light has a transmission characteristic.

An imaging processing device and an imaging processing method that can solve a problem generated in visible light photographing in a case where DBPF is used instead of an infrared cut filter. An imaging sensor includes a color filter, and DBPH that has a transmission characteristic in a visible-light band, blocking characteristic in a first wavelength band adjacent to a long-wavelength side of the visible-light band, and transmission characteristic in a second wavelength band that is a part of the first wavelength band. A signal processing unit subtracts an infrared signal, which is output from an infrared pixel, from each color signal output from a pixel in each color of visible light in the imaging sensor. Here, in a case where each color signal reaches a pixel saturation level, control of performing correction in such a manner that an infrared signal subtracted from each color signal is lowered is performed.

Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.