A voltage to be applied to a charge holding section to which charges generated by a plurality of photoelectric conversion sections are transferred is adjusted. An imaging element includes a plurality of photoelectric conversion sections, a charge holding section, a plurality of charge transfer sections, an image signal generation section, and a plurality of capacitive coupling wirings. The photoelectric conversion section performs photoelectric conversion of incident light to generate a charge. The charge holding section holds the generated charge. The charge transfer section is arranged for each photoelectric conversion section and transfers the generated charge to the charge holding section. The image signal generation section generates an image signal corresponding to the held electric charge. The capacitive coupling wirings are capacitively coupled to the charge holding section, and are individually applied with an adjustment signal for adjusting the potential of the charge holding section.

An image sensor includes a substrate that includes a plurality of pixel areas, where the substrate includes a first surface and a second surface that are opposite to each other; and a device isolation pattern that extends from the first surface and into the substrate, where the device isolation pattern is between the plurality of pixel areas, where the device isolation pattern includes an intervening region, a crossing region, a first device isolation portion, and a second device isolation portion, where the intervening region includes: a first dielectric pattern; a conductive liner; and a second dielectric pattern, where the first dielectric pattern extends from the first device isolation portion and toward the second device isolation portion, and where the first device isolation portion includes the conductive liner and the second dielectric pattern.

An image sensor includes a substrate that includes a first surface and a second surface that are opposite to each other, where the substrate includes a plurality of pixel areas; an isolation pattern that extends from the first surface and into the substrate, where the isolation pattern is between the plurality of pixel areas; and an antireflection layer on the isolation pattern, where the isolation pattern includes: a first device isolation pattern that contacts the antireflection layer; and a second device isolation pattern that is spaced apart from the antireflection layer, where the first device isolation pattern includes: a first dielectric layer; and a conductive reflection layer on the first dielectric layer, and where a top surface of the conductive reflection layer and a top surface of the first dielectric layer extend from the second surface of the substrate by a same distance.

An image sensor includes a first sub-pixel group including a plurality of first unit pixels, a first color filter, a first micro lens at least partially overlapping the plurality of first unit pixels, a second sub-pixel group including a plurality of second unit pixels, a second color filter, a second micro lens at least partially overlapping the plurality of second unit pixels, a third sub-pixel group including a plurality of third unit pixels, a third color filter, a third micro lens at least partially overlapping the plurality of third unit pixels, a first dead zone in which the first micro lens does not overlap the first sub-pixel group, a second dead zone in which the second micro lens does not overlap the second sub-pixel group, and a third dead zone in which the third micro lens does not overlap the third sub-pixel group.

The present technology relates to an imaging element and an electronic apparatus that can suppress color mixture. The imaging element includes a first photoelectric converter that generates a charge corresponding to an amount of light, a second photoelectric converter that has a smaller light-receiving area than the first photoelectric converter, and a light-blocking wall provided between adjacent pixels. The light-blocking wall is provided in a shape having a spaced-apart region. The region is a region where light-blocking walls intersect in a case where the light-blocking walls are provided. The light-blocking wall is provided on each side of the first photoelectric converter, one end of the light-blocking wall serves as a region, and the other end is connected to another light-blocking wall. The present technology can be applied to an imaging element that acquires an image having an expanded dynamic range by using large pixels and small pixels.

An imaging device of an embodiment of the present disclosure includes a semiconductor substrate, multiple first pixels, and multiple second pixels. The semiconductor substrate includes a first surface and a second surface that are opposed to each other, and includes a pixel array unit in which multiple unit pixels are arranged in a matrix. The multiple first pixels are each provided in corresponding one of the multiple unit pixels. The multiple second pixels are each provided in corresponding one of the multiple unit pixels and convert a smaller amount of charge per unit time than the multiple first pixels. The multiple second pixels are each disposed in corresponding one of the unit pixels to allow the multiple second pixels to be equal to each other in distance from a center of the pixel array unit, on the basis of respective positions, in the pixel array unit, of the multiple unit pixels in which the respective second pixels are provided, in a planar view.

An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.

An image sensor includes a substrate having a plurality of pixel regions and a deep device isolation pattern disposed in the substrate between the pixel regions. The pixel regions include first, second, third, and fourth pixel regions, which are adjacent to each other in first and second directions. The deep device isolation pattern includes first portions interposed between the first and second pixel regions and between the third and fourth pixel regions and spaced apart from each other in the second direction, and second portions interposed between the first and third pixel regions and between the second and fourth pixel regions and spaced apart from each other in the first direction. The first pixel region includes a first extended active pattern, which is extended to the second pixel region in the first direction and is disposed between the first portions of the deep device isolation pattern.

Provided is a solid-state image capturing apparatus that can, between an image height center and positions where the image height becomes higher, align the impact of incident light with respect to light-blocking films. The solid-state image capturing apparatus is provided with a semiconductor substrate in which multiple pixels are disposed in a matrix. Each of the multiple pixels is provided with a photoelectric conversion unit that generates charge according to photoelectric conversion based on light incident on a light-receiving surface of the semiconductor substrate, a charge accumulating unit that accumulates the charge generated by the photoelectric conversion unit, a transfer transistor that transfers charge from the photoelectric conversion unit to the charge accumulating unit and has a vertical gate electrode that reaches the photoelectric conversion unit, and a light-blocking section that is formed by a trench disposed within a layer between the light-receiving surface and the charge accumulating unit and blocks light that is incident via the light-receiving surface from being incident on the charge accumulating unit. An amount of cover by the light-blocking section with respect to the charge accumulating unit is corrected according to an image height of a position where the pixel is disposed.

An imaging device according to an embodiment of the present disclosure includes: a semiconductor substrate having a first surface and a second surface opposed to each other, the semiconductor substrate including a plurality of pixels disposed in a matrix, and a plurality of photoelectric converters that each generates, through photoelectric conversion, electric charge corresponding to an amount of received light for each of the pixels; a plurality of color filters provided on a side of the first surface in respective ones of the plurality of pixels; a plurality of condensing lenses provided on a light incident side of the plurality of color filters in the respective ones of the plurality of pixels; and a separation wall provided between the plurality of color filters adjacent to each other on the side of the first surface, the separation wall having a line width on the light incident side narrower than the line width of the separation wall on the side of the first surface.