A pixel for an image sensor includes a microbolometer sensor portion, a visible image sensor portion and an output path. The microbolometer sensor portion outputs a signal corresponding to an infrared (IR) image sensed by the microbolometer sensor portion. The visible image sensor portion outputs a signal corresponding to a visible image sensed by the visible image sensor portion. The output path is shared by the microbolometer and the visible image sensor portions, and is controlled to selectively output the signal corresponding to the IR image or the signal corresponding to the visible image. The output path may be further shared with a visible image sensor portion of an additional pixel, in which case the output path may be controlled to selectively to also output the signal corresponding to a visible image of the additional pixel.

Some embodiments relate to an integrated circuit light sensor device. The integrated circuit light sensor device includes a semiconductor substrate, as well as a plurality of first light-absorption regions and a plurality of second light-absorption regions located in the semiconductor substrate. Each of the first light-absorption regions includes an implantation region of the semiconductor substrate. The implantation region and the semiconductor substrate form at least a portion of a corresponding one of a plurality of first photodetectors for a first light wavelength band. Each of the second light-absorption regions includes a semiconductor material different from the semiconductor substrate. The semiconductor material forms at least a portion of a corresponding one of a plurality of second photodetectors for a second light wavelength band different from the first light wavelength band.

An electromagnetic radiation detector pixel includes a set of epitaxial layers and a lens. The set of epitaxial layers defines an electromagnetic radiation absorber. The lens is directly bonded to the set of epitaxial layers.

According to an aspect of the present inventive concept there is provided a device for imaging of a microscopic object, the device comprising: an array of light sensitive areas sensitive to detect light spanning a wavelength range of at least 400-1200 nm; at least one light source comprising at least a first point of operation in which the at least one light source is configured to generate visible light, and a second point of operation in which the at least one light source is configured to generate infrared light, and being arranged to illuminate the microscopic object such that light is scattered by the microscopic object; wherein the array of light sensitive areas is configured to detect an interference pattern formed between the scattered light and non-scattered light; the device being configured to be set in a selected point of operation from the at least first and second points of operation, for detecting the interference pattern for imaging the microscopic object at a wavelength defined by the selected point of operation.

A process for fabricating a detecting device includes producing a getter pad based on amorphous carbon resting on a mineral sacrificial layer that covers a thermal detector and producing a thin encapsulating layer that rests on the mineral sacrificial layer and that covers an upper face and sidewalls of the getter pad. The mineral sacrificial layer is removed via a first chemical etch, and a protective segment of the getter pad is removed via a second chemical etch.

An image sensor includes a visible light sensor portion and an infrared sensor portion arranged on the visible light sensor portion. The visible light sensor portion includes a first sensor layer and a first signal wiring layer, wherein a plurality of visible light sensing elements are arrayed in the first sensor layer and the first signal wiring layer is configured to process a signal output from the first sensor layer. The infrared sensor portion includes a second sensor layer in which a plurality of infrared sensing elements are arrayed, and a second signal wiring layer configured to process a signal output from the second sensor layer. The infrared sensor portion and the visible light sensor portion form a single monolithic structure which is effective in obtaining high resolution.

An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

A time of flight sensor includes at least one demodulation pixel. Each demodulation pixel includes a semiconductor substrate; a charge generation region in the semiconductor substrate, the charge generation region having a lateral extent, the charge generation region being configured to convert light into charge carriers; a light directing element in the charge generation region of the semiconductor substrate, the light directing element being configured to direct light through at least a portion of the lateral extent of the charge generation region; a collection region in the semiconductor substrate, the collection region being configured to collect the charge carriers generated in at least a portion of the lateral extent of the charge generation region, and a readout component in electrical communication with the collection region, the readout component being operable to control an electrical coupling between the charge generation region and the collection region.

A pixel array includes octagon-shaped pixel sensors and a combination of visible light pixel sensors (e.g., red, green, and blue pixel sensors) and near infrared (NIR) pixel sensors. The color information obtained by the visible light pixel sensors and the luminance obtained by the NIR pixel sensors may be combined to increase the low-light performance of the pixel array, and to allow for low-light color images in low-light applications. The octagon-shaped pixel sensors may be interspersed in the pixel array with square-shaped pixel sensors to increase the utilization of space in the pixel array, and to allow for pixel sensors in the pixel array to be sized differently. The capability to accommodate different sizes of visible light pixel sensors and NIR pixel sensors permits the pixel array to be formed and/or configured to satisfy various performance parameters.

A photodetector including a substrate having a semiconductor material layer, such as a silicon-containing layer, and a germanium-based well embedded in the semiconductor material layer, where a gap is located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer. The gap between the lateral side surface of the germanium-based well and the surrounding semiconductor material layer may reduce the surface contact area between the germanium-containing material of the well and the surrounding semiconductor material, which may be a silicon-based material. The formation of the gap located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer may help minimize the formation of crystal defects, such as slips, in the germanium-based well, and thereby reduce the dark current and improve photodetector performance.