A light-receiving device of an embodiment of the disclosure includes: a semiconductor substrate including a light-receiving region with light-receiving elements arranged two-dimensionally in matrix, and a peripheral region provided therearound; a first first electrically-conductive region provided at an interface of a first surface of the semiconductor substrate for each element and coupled to a first electrode, in the light-receiving region; a second first electrically-conductive region provided around the first first region provided for each element and coupled to a second electrode, at the interface; a third first electrically-conductive region provided around the second first region provided for each element and having electrically floating state, at the interface;

a fourth first electrically-conductive region provided at the interface around the light-receiving region and having electrically floating state, in the peripheral region; and a first second electrically-conductive region embeddedly formed in the semiconductor substrate and facing the second, third, and fourth first regions.

The present disclosure discloses a flat panel detector, a driving method, a driving device and a flat panel detection device. The flat panel detector includes: a base substrate, and a plurality of detection units located on the base substrate; each of the detection units includes a photodiode and a detection transistor; the flat panel detector further includes: a compensation semiconductor material layer including a plurality of compensation structures mutually spaced; each detection transistor is correspondingly provided with a compensation structure, and the compensation structure is located between a gate and a gate insulating layer of the corresponding detection transistor.

There is provided a detection panel, including: a substrate, gate lines, signal detection lines and pixels, a thin film transistor and an optical sensor are arranged in each pixel, the thin film transistor has a gate coupled with the corresponding gate line, a first electrode coupled with the corresponding signal detection line, and a second electrode coupled with a third electrode of the optical sensor in the same pixel; the pixels include at least one detecting pixel and at least one marking pixel, a first bias voltage line and a second bias voltage line are arranged on a side of the optical sensor away from the substrate, a fourth electrode of the optical sensor in the detecting pixel is coupled with the corresponding first bias voltage line, and the second electrode of the thin film transistor in the marking pixel is coupled with the corresponding second bias voltage line.

An electronic component includes a first support member having a third main surface and a fourth main surface, at least a partial portion of the third main surface supporting at least a partial portion of the second main surface of the semiconductor substrate, and a second support member having a fifth main surface and a sixth main surface, at least a partial portion of the fifth main surface supporting at least a partial portion of the fourth main surface of the first support member. In a case where the electronic component is seen through from a direction perpendicular to the first main surface, the semiconductor substrate has a first region and a second region adjoining an outer side of the first region, the semiconductor substrate does not overlap any of the first support member and the second support member in the first region.

Systems, devices, and methods for optical sensing applications. An example multi-wavelength light emitter structure including a substrate; and a vertical structure over the substrate and extending vertically away from the substrate along an axis, the vertical structure comprising a first active region including one or more cascade stages of superlattices for light emission at a first wavelength; a second active region including one or more cascade stages of superlattices for light emission at a second wavelength different from the first wavelength, wherein the second active region is closer to the substrate than the first active region and spaced apart from the first active region; and an electrically conductive material along sidewalls of at least one of the first active region or the second active region.

A radiation detector includes a radiation-sensitive semiconductor substrate, a cathode electrode disposed over a first surface of the radiation-sensitive semiconductor material substrate, and at least one anode electrode disposed over a second surface of the radiation-sensitive semiconductor material substrate, where the at least one anode electrode includes a semiconductor material layer including cadmium sulfide located between a metallic material and the semiconductor material substrate. In one embodiment, the radiation-sensitive semiconductor substrate includes cadmium zinc telluride (CZT), and the semiconductor material layer includes Cd.sub.1-xZn.sub.xTe.sub.yS.sub.1-y, where 0x0.5 and 0y0.5. Further embodiments include methods of fabricating a radiation detector that include exposing a surface of a radiation-sensitive semiconductor material substrate to a gas containing hydrogen sulfide at an elevated temperature to form a sulfide-containing semiconductor material layer.

A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface on one side thereof and a secondary surface on an opposite side thereof, and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at said one side of the primary surface of the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and being disposed on the primary surface of the first semiconductor layer, and a charge-attracting semiconductor layer of the first conductivity type configured to attract electrical charges generated in the insulating layer when a fixed voltage is supplied to the charge-attracting semiconductor layer.

The present disclosure provides a semiconductor device including: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein. The second semiconductor layer is formed at a same side of the primary surface of the first semiconductor layer. The device further includes an insulating layer formed between the first semiconductor layer and the second semiconductor layer. The insulating layer is disposed on the primary surface of the first semiconductor layer and surrounds the circuit element, and includes a charge-attracting semiconductor pattern of the first conductivity type that is disposed near the circuit element so as to attract electrical charges generated in the insulating layer.