A hybrid pixel sensor array is provided. Each pixel of the array comprises: a sensor for generating an imaging signal; a Charged-Coupled Device (CCD) array, coupled to the sensor so as to receive samples from the imaging signal and configured for storage of a plurality of samples; and active CMOS circuitry, coupled to the CCD array for generating a pixel output signal from the stored samples. The sensors of the pixels are part of a sensor portion of the hybrid pixel sensor array that is separate from both the CCD array and active CMOS circuitry of the pixels.

A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

According to an embodiment, a detector pack comprises a first substrate and a second substrate. the first substrate includes a first surface and a second surface. the first substrate is provided with an X-ray detecting element in the first surface. the second substrate includes a third surface and a fourth surface. The second substrate is disposed in the second surface to face the third surface. The second substrate is provided with a data acquisition circuit in the third surface. The first substrate and the second substrate are formed as a stacked body. The data acquisition circuit is provided in the third surface not to come in contact with the second surface of the first substrate.

A radiation detection apparatus includes a plurality of unit structures each having a semiconductor layer that converts radiation into a charge, the unit structures being arranged to form an array, and a coupling member that couples two of the unit structures adjacent to each other in the array. The coupling member is formed from a material capable of being used as a vapor deposition material. Each of the plurality of unit structures further includes a mounting board on which is mounted an integrated circuit that processes a signal based on the charge obtained by the semiconductor layer

Various approaches are discussed for using four-side buttable CMOS tiles to fabricate detector panels, including large-area detector panels. Fabrication may utilize pads and interconnect structures formed on the top or bottom of the CMOS tiles. Electrical connection and readout may utilize readout and digitization circuitry provided on the CMOS tiles themselves such that readout of groups or sub-arrays of pixels occurs at the tile level, while tiles are then readout at the detector level such that readout operations are tiered or multi-level.

An imaging system detector array (112) includes a detector tile (116). The detector tile includes a photosensor array (202), including a plurality of photosensor pixels (204). The detector tile further includes a scintillator array (212) optically coupled to the photosensor array. The detector tile further includes an electronics layer or ASIC on a substrate (214) that is electrically coupled to the photosensor array. The electronics layer includes a plurality of individual and divisible processing regions (302). Each processing region including a predetermined number of channels corresponding to a sub-set of the plurality of photosensor pixels. The processing regions are in electrical communication with each other. Each processing region includes its own electrical reference and bias circuitry (802, 804).

Improved imaging systems are disclosed. More particularly, the present disclosure provides for an improved image sensor assembly for an imaging system, the image sensor assembly having an integrated photodetector array and its associated data acquisition electronics fabricated on the same substrate. By integrating the electronics on the same substrate as the photodetector array, this thereby reduces fabrications costs, and reduces interconnect complexity. Since both the photodiode contacts and the associated electronics are on the same substrate/plane, this thereby substantially eliminates certain expensive/time-consuming processing techniques. Moreover, the co-location of the electronics next to or proximal to the photodetector array provides for a much finer resolution detector assembly since the interconnect bottleneck between the electronics and the photodetector array is substantially eliminated/reduced. The co-location of the electronics next to or proximal to the photodetector array also enables/facilitates programmable pixel configuration for optimal image quality.

The semiconductor device comprises a semiconductor wafer with an integrated circuit, formed by a plurality of dies, a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material, the semiconductor wafer and the further semiconductor wafer being bonded to one another by means of a bonding layer, and an electrically conductive contact layer arranged on the further semiconductor wafer opposite to the bonding layer.

A process for fabricating an organic photodetector is presented. The process includes providing an array of thin film transistor assemblies, each thin film transistor assembly including a first electrode disposed on a thin film transistor; disposing an organic semiconductor layer on the array; disposing a second electrode layer including a first inorganic material on the organic semiconductor layer through a shadow mask to form a first etch stop layer; and removing portions of the organic semiconductor layer unprotected by the first etch stop layer using a dry etching process to form a multilayered structure. An organic photodetector, for example an organic x-ray detector fabricated by the process is further presented. An x-ray system including the organic x-ray detector is also presented.

The image quality and useful life of an x-ray imaging detector is enhanced by adding a shield layer between the photodiode/thin film transistor (TFT) array and the cesium iodide (CsI)-based scintillator/scintillator layer. The shield layer prevents dynamic charge coupling between a CsI/parylene layer located above the shield layer and the conductive data transfer lines located below the shield layer and operably connected to the individual pixels of the photodiode/TFT array to effectively maintain the level of various image quality parameters over time, including the modulation transfer function (MTF), and the Signal to Noise Ratio (SNR).