An X-ray device including a sensing panel and a scintillator layer is provided. The sensing panel includes a substrate and a first pixel. The first pixel is disposed on the substrate and includes a first light sensing component and a first switch component. The first switch component is disposed on the first light sensing component. The scintillator layer is disposed on the sensing panel, and the first switch component is disposed between the scintillator layer and the first light sensing component.

A manufacturing method of a photoelectric conversion panel includes forming a short ring, forming a plurality of data lines connected to a TFT and the short ring, forming a first conductive portion of a bias line connected to the photodiode in an upper layer above the photodiode, electrically blocking the short ring and the TFT from each other by cutting the plurality of data lines after the forming of the first conductive portion, and forming an inorganic insulating film in a blocking portion created by the plurality of data lines being cut.

In a general aspect, an apparatus includes a scintillator crystal, and a semiconductor die including a first side and a second side opposite the first side. The semiconductor die includes a photomultiplier array disposed on the first side. The scintillator crystal is disposed on the first side of the semiconductor die. The apparatus also includes a carrier disposed on the second side of the semiconductor die. The photomultiplier array is electrically coupled with the carrier. The apparatus further includes a molding material disposed on a sidewall defined by at least one of the semiconductor die or the carrier. The molding material is configured to protect the photomultiplier array from moisture ingress.

Provided are a detection substrate and a ray detector. The detection substrate includes: a base substrate; a plurality of detection pixels located on the base substrate, at least one detection pixel serves as a detection marking pixel. The detection marking pixel includes: a storage capacitor, a first electrode plate of the storage capacitor coupled to a bias voltage end; a discharge circuit configured to write a signal of the bias voltage end into a second electrode plate of the storage capacitor under the control of a first scanning signal end; and a reading circuit coupled to an external reading circuit, the reading circuit configured to write the voltage of the second electrode plate of the storage capacitor into the external reading circuit and write a reference signal of the external reading circuit into the second electrode plate of the storage capacitor under the control of a second scanning signal end.

A radiation detector includes: a scintillator including a pair of end surfaces opposing each other in a first direction and one side surface coupling the pair of end surfaces; and a semiconductor photodetector including a semiconductor substrate. A length of the scintillator in the first direction is longer than a length of the scintillator in a second direction orthogonal to the one side surface. A length of the one side surface in the first direction is longer than a width of the one side surface in a third direction orthogonal to the first direction and the second direction. The semiconductor substrate includes a photodetection region disposed in a first portion and a first electrode and a second electrode disposed in a second portion. The photodetection region includes a plurality of avalanche photodiodes arranged to operate in Geiger mode and a plurality of quenching resistors.

An electronic device including a substrate, a silicon transistor disposed on the substrate, an oxide transistor disposed on the substrate and electrically connected to the silicon transistor, and a sensor configured to receive a light and output a signal. The silicon transistor and the oxide transistor are operated corresponding to the signal.

A thin-film transistor to be used in an X-ray sensor includes a gate electrode, a semiconductor layer, and a gate insulating layer located between the semiconductor layer and the gate electrode. The gate insulating layer includes a first region having an interface with the gate electrode, a second region having an interface with the semiconductor layer, and a third region located between the first region and the second region. Each of the first region and the second region has a density of electron trap states and a density of hole trap states that are higher than whichever of a density of electron trap states and a density of hole trap states of the third region that is lower.

In the present application disclosed are a sub-pixel imaging method and device, an imaging apparatus, a detector and a storage medium. The sub-pixel imaging method comprises: using a photon detector comprising a plurality of microcells to receive incident photons, such that pulse signals are generated by corresponding microcells receiving the incident photons, reading out the generated pulse signals, wherein there are different characteristics of the readout pulse signals when a given photon is incident on different microcells, based on characteristics of the readout pulse signals, determining corresponding microcells receiving the incident photons and/or determining incident photon intensity distribution of different microcells of the photon detector. Compared with existing photon detectors that use the entire photosensitive area as the minimum sensing unit, the sub-pixel imaging method, device, imaging apparatus, detector and storage medium of the embodiments of the present application have higher photon resolution without changing the physical size of existing photoelectric devices.

Provided herein is a digital x-ray detector and a method for repairing a bad pixel thereof, the detector including a substrate; a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain; a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode; a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer; a bias line connected to the upper electrode of the PIN diode; and a scintillator arranged above the PIN diode, wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode.

An MN array of sensor tiles are attached to a substrate using a compliant layer that includes an adhesive. A thickness of the compliant layer varies depending on a thickness of the sensor tiles so that outward facing sides of the sensor tiles are substantially aligned.