An integrated optical sensor and methods for forming and using the same is provided. The integrated optical sensor comprising: a light source; a transparent substrate, having a first surface and a second surface opposite to each other; a first pixel cell array region, located on the first surface and adapted to receiving lights emitted from the light source and reflected by an external object; a second pixel cell array region, located on the first surface and adapted to receiving lights emitted from the light source and reflected by the fingerprint; and a third pixel cell array region, located on the first surface and adapted to receiving visible lights from outside. The integrated optical sensor has simplified structures, the forming method thereof has improved processes, and the using method thereof has more applications. Besides, production costs may be reduced.

A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.

A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.

A method of manufacturing a junction field effect transistor having a channel region disposed in a semiconductor substrate, deeper than one of a source region and a drain region, the method includes a first step of forming a first mask having a first opening portion over the semiconductor substrate in which a first semiconductor region of a first conductivity type is disposed, a second step of forming a second semiconductor region of a second conductivity type defined as the channel region, in the first semiconductor region by implantation of ions of second conductivity type opposite to the first conductivity type using the first mask, and a third step of forming a third semiconductor region of the second conductivity type defined as the one of the source region and the drain region, by implantation of ions of the second conductivity type, using the first mask.

Optoelectronic retinal prostheses transduce light into electrical current for neural stimulation. A novel optoelectronic pixel architecture is presented comprising a vertically integrated photo junction field-effect-transistor (Photo-JFET) and neural stimulating electrode. Experimental measurements demonstrate that optically addressed Photo-JFET pixels utilize phototransistive gain to produce a broad range of neural stimulation current and can effectively stimulate retinal neurons in vitro. The compact nature of the Photo-JFET pixel can enable high resolution retinal prostheses with a theoretical visual acuity 20/60 to help restore vision in patients with degenerative retinal diseases.

One embodiment according to the present disclosure is an imaging apparatus including pixels. The pixel includes a junction type field effect transistor (JFET) provided in a semiconductor substrate. The JFET includes a gate region and a channel region. An orthogonal projection of the gate region onto a plane parallel to a surface of the semiconductor substrate intersects an orthogonal projection of the channel region onto the plane. Each of a source-side portion of the orthogonal projection of the channel region and a drain-side portion of the orthogonal projection of the channel region protrudes out of the orthogonal projection of the gate region.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.