A pattern recognition substrate and a display device are disclosed, the pattern recognition substrate includes: a base substrate; a photosensitive device arranged on the base substrate and including a first electrode, a photoelectric conversion layer and a second electrode that are stacked, where the photoelectric conversion layer includes an I-type semiconductor layer with a thickness enough to convert a part of fingerprint-reflected light to an electrical signal, the first electrode includes a light-transmitting region transmitting the fingerprint-reflected light which is converted by the photoelectric conversion layer; and a light absorbing layer arranged between the base substrate and a layer where the photosensitive device is located to absorb the fingerprint-reflected light not converted by the photoelectric conversion layer.

An imaging device in which noise can be reduced, and an electronic device using this device. The imaging device includes a light receiving element, and a read circuit. A field effect transistor in the read circuit has a semiconductor layer in which a channel is formed, a gate electrode that covers the semiconductor layer, and a gate insulating film disposed between the semiconductor layer and the gate electrode. The semiconductor layer has a main surface, and a first side surface on one end side of the main surface in a gate width direction of the field effect transistor. The gate electrode has a first portion that faces the main surface via the gate insulating film, and a second portion that faces the first side surface via the gate insulating film. A crystal plane of the first side surface is a plane or a plane equivalent to the plane.

According to an aspect, an image sensor package includes a substrate, an image sensor die coupled to the substrate, a light transmitting member, and a plurality of pillar members disposed between and contacting the image sensor die and the light transmitting member. A height of the plurality of pillar members defines a gap height between an active region of the image sensor die and the light transmitting member. The image sensor package including a bonding material that couples the light transmitting member to the image sensor. The bonding material contacts a side of a pillar member, of the plurality of pillar members, that extends between a first end contacting the light transmitting member and a second end contacting the image sensor die.

An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface and a second surface opposite to each other. A semiconductor pattern is disposed on the first surface of the semiconductor substrate and it extends in a first direction perpendicular to the first surface. A buried transmission gate electrode is disposed in a transmission gate trench extending from the first surface of the semiconductor substrate to an interior of the semiconductor substrate. A first gate electrode at least partially surrounds a side wall of the semiconductor pattern and has a ring-shaped horizontal cross-section. A color filter is disposed on the second surface of the semiconductor substrate.

The present technique relates to a solid-state imaging device, a solid-state imaging device manufacturing method, and an electronic apparatus that are capable of providing a solid-state imaging device that can prevent generation of RTS noise due to miniaturization of amplifying transistors, and can achieve a smaller size and a higher degree of integration accordingly. A solid-state imaging device includes a photodiode as a photoelectric conversion unit, a transfer gate that reads out charges from the photodiode, a floating diffusion from which the charges of the photodiode are read by an operation of the transfer gate, and an amplifying transistor connected to the floating diffusion. More particularly, the amplifying transistor is of a fully-depleted type. Such an amplifying transistor includes an amplifier gate (gate electrode) extending in a direction perpendicular to convex strips formed by processing a surface layer of a semiconductor layer, for example.

A method of fabricating a semiconductor structure includes disposing a metal catalyst on a surface of a semiconductor. Thereafter, metal assisted chemical etching is performed, including holding the semiconductor immersed in an etchant solution and catalyzing an etching chemical reaction between the etchant solution and the semiconductor using the metal catalyst to etch the semiconductor to form a channel in the semiconductor. During at least a portion of the metal assisted chemical etching the semiconductor is held immersed in the etchant solution with a surface normal of the surface of the semiconductor at a non-zero angle respective to gravity. In some examples, an orientation of the semiconductor is changed during the metal assisted chemical etching to form the channel in the semiconductor with at least one bend or curved portion.

An image sensor comprising a semiconductor substrate, a first source region, a second source region, and a shared gate electrode is described. The semiconductor substrate includes a first side and a second side opposite the first side. The first source region and the second source region are each disposed within the semiconductor substrate proximate to the first side. The first source region is separated from the second source region by an isolation structure disposed within the semiconductor substrate between the first source region and the second source region. The shared gate electrode is disposed proximate to the first side of the semiconductor substrate and coupled to the first source region and the second source region to respectively form a first transistor and a second transistor.

The present disclosure relates to semiconductor device. One example semiconductor device includes a plurality of unit pixels, where each unit pixel of the plurality of unit pixels includes a pair of transfer gates including a first transfer gate and a second transfer gate, a photoelectric converter, and a floating diffusion region spaced apart from the photoelectric converter. The first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.

An image sensor that includes a substrate including a photoelectric conversion region, a semiconductor pattern on the substrate, a gate electrode on the semiconductor pattern, and a gate insulating layer between the semiconductor pattern and the gate electrode. The semiconductor pattern includes a first sub pattern including a first source/drain region, a second sub pattern including a second source/drain region, and a third sub pattern between the first sub pattern and the second sub pattern. The gate electrode is on the third sub pattern. The first sub pattern, the second sub pattern, and the third sub pattern extend along different directions.

An image sensing device includes a photoelectric conversion region configured to generate photocharges, a photogate region configured to overlap the photoelectric conversion region and allow the photocharges to be collected in the photoelectric conversion region, and a transfer gate disposed adjacent to the photogate region in a first direction and configured to transmit the photocharges to a floating diffusion region. The photogate region includes a first photogate in which a length extending in a second direction is longer than a length of the photoelectric conversion region extending in the second direction, and a second photogate in which a length extending in the second direction is shorter than a length of the photoelectric conversion region extending in the second direction. The first photogate includes a recess region formed to contact the photoelectric conversion region, and extend vertically from one surface of a region where the photoelectric conversion region is located.