A semiconductor device, a manufacturing method therefor, and an electronic apparatus that reduces a parasitic capacitance generated between an internal electrode and a board silicon to suppress waveform distortion and signal delay of high-frequency signals, thereby enabling a high-speed operation. A configuration to include: a board silicon; a silicon oxide film stacked on the board silicon; an inter-wiring-layer film having an internal electrode stacked on the silicon oxide film; a through-hole forming a stepped hole with a larger-diameter hole extending from the board silicon to the silicon oxide film and a smaller-diameter hole extending from the silicon oxide film to the internal electrode; an interlayer dielectric film stacked on a circumferential side surface of the larger-diameter hole and the board silicon; and a redistribution layer on an inner peripheral surface of the through-hole and the interlayer dielectric film and connected to the internal electrode.

Provided are systems, methods, and apparatuses for non-scattering nanostructures of silicon pixel image sensors. In one or more examples, the systems, devices, and methods include forming a metal layer on a substrate layer of the pixel, the metal layer to reflect electromagnetic radiation incident on the pixel; forming a photodetector on a silicon layer of the pixel, the photodetector to generate photoelectrons based on the electromagnetic radiation; and forming a passivation layer over the silicon layer, the passivation layer including a thin film dielectric. In one or more examples, the systems, devices, and methods include forming a nanostructure on the passivation layer, the nanostructure to allow the electromagnetic radiation to pass through the nanostructure and steer the electromagnetic radiation linearly towards the photodetector, and forming a microlens on the nanostructure, the microlens including at least one of a flat coat layer or a curved lensing layer.

According to a semiconductor device, it is possible to obtain a favorable heat dissipation property, prevent falling of a material from a side surface of a substrate, and prevent generation of noise such as a flare caused by light reflected from members being present around a semiconductor element. The semiconductor device includes a substrate, a semiconductor element which is electrically connected to the substrate, a connecting member which electrically connects the substrate with the semiconductor element, a support portion which is provided on the substrate and supports a transparent member being located above the semiconductor element with respect to the substrate, a first resin portion provided on the semiconductor element, and a second resin portion which fills a space between the support portion and the first resin portion and covers the connecting member.

Generation of outgassing is restrained to restrain deterioration in optical properties of a cover glass. A method for manufacturing an electronic device includes baking step of heating the cover glass on which an antireflection layer made of a cured product of a light-curing resin has been formed, an assembling step of installing the cover glass after the baking step at a position opposed to a light receiving surface of a sensor element to assemble a sensor module, and a reflow step of placing the sensor module on a mounting substrate and applying heat at a temperature of more than or equal to 250 C. to solder the sensor module to the mounting substrate. The baking step is performed before the reflow step to make a rate of generation of outgassing derived from a monomer having a monofunctional (meth)acryloyl group in outgassing generated from the antireflection layer of the cover glass in the reflow step less than or equal to 0.5% by mass relative to a mass of the antireflection layer.

An image sensor includes: a first substrate including: a first side, a second side, a pixel array region, and an edge region; and a micro lens array on the second side, which includes micro lenses. Each of the micro lenses includes a first lens layer and a second lens layer on the first lens layer. A second mean curvature radius of the second lens layer is smaller than a first mean curvature radius of the first lens layer. A first eccentric degree of the second lens layer on an edge of the pixel array region is greater than a second eccentric degree of the second lens layer at a center of the pixel array region.

A pattern recognition substrate and a display device are disclosed, the pattern recognition substrate includes: a base substrate; a photosensitive device arranged on the base substrate and including a first electrode, a photoelectric conversion layer and a second electrode that are stacked, where the photoelectric conversion layer includes an I-type semiconductor layer with a thickness enough to convert a part of fingerprint-reflected light to an electrical signal, the first electrode includes a light-transmitting region transmitting the fingerprint-reflected light which is converted by the photoelectric conversion layer; and a light absorbing layer arranged between the base substrate and a layer where the photosensitive device is located to absorb the fingerprint-reflected light not converted by the photoelectric conversion layer.

An optical semiconductor package includes a first chip, a second chip, a first resin portion formed to cover a side surface of the first chip, a second resin portion formed to cover a side surface of the second chip, a first terminal provided on a first inner surface of the first chip, a second terminal provided on a second inner surface of the second chip, and a first wiring electrically connected to the first terminal, passing through an inside of the first resin portion, and extending from a first inner surface side to a first outer surface side of the first chip in a facing direction in which the first inner surface and the second inner surface face each other. The second chip is an optical element. The first resin portion and the second resin portion are integrally provided or continuously provided via another member.

An optical element includes a base material, which consists of resin material, and an antireflection film. The antireflection film consists of a first film formed on the base material and a second film formed on the first film. The second film consists of a first layer, a second layer, and a third layer, in order from a side closest to the first film. The first layer and the third layer each include silicon oxide. The second layer includes magnesium fluoride.

An image sensing device for preventing a crosstalk path is disclosed. The image sensing device includes a substrate including a plurality of photoelectric conversion elements, each of which generates and accumulates photocharges corresponding to incident light and a plurality of lenses disposed over the substrate, and arranged to receive the incident light and to direct received incident light to the plurality of photoelectric conversion elements, wherein the plurality of lenses includes a first lens and a second lens that are arranged to contact each other and have different refractive indexes from each other.

A photodetector including a substrate having a semiconductor material layer, such as a silicon-containing layer, and a germanium-based well embedded in the semiconductor material layer, where a gap is located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer. The gap between the lateral side surface of the germanium-based well and the surrounding semiconductor material layer may reduce the surface contact area between the germanium-containing material of the well and the surrounding semiconductor material, which may be a silicon-based material. The formation of the gap located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer may help minimize the formation of crystal defects, such as slips, in the germanium-based well, and thereby reduce the dark current and improve photodetector performance.