Provided are systems, methods, and apparatuses for non-scattering nanostructures of silicon pixel image sensors. In one or more examples, the systems, devices, and methods include forming a metal layer on a substrate layer of the pixel, the metal layer to reflect electromagnetic radiation incident on the pixel; forming a photodetector on a silicon layer of the pixel, the photodetector to generate photoelectrons based on the electromagnetic radiation; and forming a passivation layer over the silicon layer, the passivation layer including a thin film dielectric. In one or more examples, the systems, devices, and methods include forming a nanostructure on the passivation layer, the nanostructure to allow the electromagnetic radiation to pass through the nanostructure and steer the electromagnetic radiation linearly towards the photodetector, and forming a microlens on the nanostructure, the microlens including at least one of a flat coat layer or a curved lensing layer.

An image sensor structure including an image stack disposed over a device stack. The image stack includes a plurality of light detectors. A first optical filter stack is disposed over the image stack. The first optical filter stack includes a light guide layer. Light pipe cavities are disposed in the light guide layer. Each light pipe cavity is associated with a light detector. Each light pipe cavity has an aspect ratio that is greater than about 2.5 to about 1. A nanowell layer is disposed over the first optical filter stack. Nanowells are disposed in the nanowell layer. Each nanowell is associated with a light detector.

Improvement of pixel characteristics is achieved. A light detecting device includes a semiconductor layer and first and second separation areas disposed in the semiconductor layer. The first separation area includes an insulating film that fills a first dug part extending in a thickness direction of the semiconductor layer and of which a refractive index is lower than that of the semiconductor layer, and the second separation area includes a conductive film filling a second dug part extending in the thickness direction of the semiconductor layer.

An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

A light deflecting device and a distance measuring device in which spread of emission light is suppressed and an effective opening for light reception is enlarged are provided.

A light deflecting device including a plurality of waveguides that extends in a first direction in parallel to each other and is provided in a semiconductor layer, and is capable of emitting light to an external space of the semiconductor layer and receiving light from the external space, and an optical system that is provided on a substrate including the semiconductor layer and converts light deflected and emitted from the plurality of waveguides in the first direction into a light beam substantially parallel to a second direction orthogonal to the first direction.

An electromagnetic radiation detector pixel includes a set of epitaxial layers and a lens. The set of epitaxial layers defines an electromagnetic radiation absorber. The lens is directly bonded to the set of epitaxial layers.

An image sensor substrate includes an insulating layer and a conductive pattern part disposed on the insulating layer. The insulating layer includes: a first insulating part and a second insulating part disposed surrounding a periphery of the first insulating part and spaced apart from the first insulating part with a first open region interposed therebetween. The conductive pattern part includes a first conductive pattern part disposed on the first insulating part, a second conductive pattern part disposed on the second insulating part; and an extension pattern part disposed on the first open region and interconnecting the first and second conductive pattern parts. The extension pattern part includes a bent portion disposed on a corner region of the first open region.

This application provides a pixel structure, an image sensor chip, and an electronic device. The pixel structure includes a splitter and a photodiode. The photodiode includes a light-receiving surface, the light-receiving surface includes a plurality of light-receiving regions, and the splitter faces the light-receiving surface. The splitter includes a first optical layer and a second optical layer stacked, the first optical layer includes a first light-transmitting region and a second light-transmitting region, and the second optical layer includes a third light-transmitting region and a fourth light-transmitting region. Transmissivity of the first light-transmitting region and transmissivity of the second light-transmitting region are different, and transmissivity of the third light-transmitting region and transmissivity of the fourth light-transmitting region are different. A projection of the first light-transmitting region and a projection of the third light-transmitting region do not overlap in a direction perpendicular to the first optical layer.

An image capture device includes a plurality of independently formed camera channels. Each of the plurality of independently formed camera channels includes a respective sensor, wherein the respective sensor includes circuitry that controls an integration time of the respective sensor, and a respective lens that receives incident light and transmits the incident light to the respective sensor without transmitting the incident light to respective sensor of other camera channels within the plurality of independently formed camera channels. Further, a processor that is communicatively coupled to the respective sensor of each of the plurality of independently formed camera channels. The processor is configured to receive respective images from the respective sensor of each of the plurality of independently formed camera channels, and form a combined image by combing each of the respective images.

An optical sensor includes a substrate, a photoelectric element disposed on the substrate and that includes a first electrode, an intermediate layer disposed on the first electrode, and a second electrode disposed on the intermediate layer, a barrier layer disposed on the second electrode, an insulating layer that covers the photoelectric element and the barrier layer, and a bias electrode disposed on the insulating layer and electrically connected to the second electrode. The barrier layer is spaced apart from the first electrode.