A photoelectric packaging structure, and a preparation method of the photoelectric packaging structure, and a camera module having the photoelectric packaging structure are provided. The photoelectric packaging structure includes a substrate module and a photosensitive chip. The substrate module includes a substrate, and the substrate module defines a plurality of channels. The photosensitive chip is located on the substrate, and includes a photosensitive area and a non-photosensitive area connected to the photosensitive area. Two ends of each of the channels extend to the substrate and the non-photosensitive area, respectively. A conductive layer is formed on an inner wall of each of the channels to form a hollow conductive channel. The hollow conductive channel is electrically connected to the substrate and the non-photosensitive area.

Provided are systems, methods, and apparatuses for non-scattering nanostructures of silicon pixel image sensors. In one or more examples, the systems, devices, and methods include forming a metal layer on a substrate layer of the pixel, the metal layer to reflect electromagnetic radiation incident on the pixel; forming a photodetector on a silicon layer of the pixel, the photodetector to generate photoelectrons based on the electromagnetic radiation; and forming a passivation layer over the silicon layer, the passivation layer including a thin film dielectric. In one or more examples, the systems, devices, and methods include forming a nanostructure on the passivation layer, the nanostructure to allow the electromagnetic radiation to pass through the nanostructure and steer the electromagnetic radiation linearly towards the photodetector, and forming a microlens on the nanostructure, the microlens including at least one of a flat coat layer or a curved lensing layer.

An image sensing module manufacturing method includes steps: forming a mold and then disposing a plurality of lenses into a barrel of the mold; after confirming the position of the plurality of lenses, adhesively combining the plurality of lenses; installing an image sensor inside the barrel; fixing the image sensor after confirming the position relationship between the plurality of lenses and the image sensor; and cutting the mold to obtain a plurality of image sensing modules.

An image sensor includes a substrate that includes a first surface and a second surface that are opposite to each other, where the substrate includes a plurality of pixel areas; an isolation pattern that extends from the first surface and into the substrate, where the isolation pattern is between the plurality of pixel areas; and an antireflection layer on the isolation pattern, where the isolation pattern includes: a first device isolation pattern that contacts the antireflection layer; and a second device isolation pattern that is spaced apart from the antireflection layer, where the first device isolation pattern includes: a first dielectric layer; and a conductive reflection layer on the first dielectric layer, and where a top surface of the conductive reflection layer and a top surface of the first dielectric layer extend from the second surface of the substrate by a same distance.

An image sensor includes a first sub-pixel group including a plurality of first unit pixels, a first color filter, a first micro lens at least partially overlapping the plurality of first unit pixels, a second sub-pixel group including a plurality of second unit pixels, a second color filter, a second micro lens at least partially overlapping the plurality of second unit pixels, a third sub-pixel group including a plurality of third unit pixels, a third color filter, a third micro lens at least partially overlapping the plurality of third unit pixels, a first dead zone in which the first micro lens does not overlap the first sub-pixel group, a second dead zone in which the second micro lens does not overlap the second sub-pixel group, and a third dead zone in which the third micro lens does not overlap the third sub-pixel group.

A photoelectric conversion apparatus includes a semiconductor substrate that includes at least one pixel having a plurality of photoelectric conversion elements configured to receive light from a common microlens, wherein the semiconductor substrate includes a first surface that is formed of light-receiving surfaces of the plurality of photoelectric conversion elements and a second surface that faces the first surface, and the first surface has a concave shape, and at least a portion of the first surface is inclined with respect to the second surface.

The present application discloses an optical semiconductor device. The optical semiconductor device includes a logic die including a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and including a memory cell area and a memory peripheral area, and a first inter-die via positioned in the memory peripheral area and electrically connected to the logic peripheral circuit area; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area and electrically coupled to the logic peripheral circuit area through the first inter-die via, and a second intra-die via positioned in the sensor peripheral area. A height of the first intra-die via is greater than a height of the second intra-die via.

Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.

This application belongs to the technical field of semiconductor devices, and relates to a pixel circuit, a control method, and an image sensor, including: at least two pixel units arranged in an array, wherein transmission transistors of at least two pixels of at least one pixel unit are connected to a corresponding first group of transmission control lines, and a transmission transistor of one other pixel is connected to a corresponding second group of transmission control lines. Therefore, the pixel circuit, the control method and the image sensor provided in the present application can control the density of phase focus of the image sensor by controlling the first group of transmission control lines and the second group of transmission control lines without changing the structure of the pixel, the structure is simple, and the optical performance is good.

An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.