Described herein are electronic-photonic packages including photonic integrated circuits (PIC) that are assembled using hybrid bonding techniques and that communicate with external electronic dies using through silicon vias (TSVs). PICs of the types described herein may be used to support optical-domain communication between electronic devices, whether in the form of inter-chip communication or intra-chip communication. A package may include a PIC comprising a photonic layer comprising a plurality of controllable photonic devices and a first plurality of TSVs, and an electronic layer hybrid-bonded to the photonic layer, the electronic layer comprising a second plurality of TSVs coupled to the first plurality of TSVs, and electronic circuitry configured to control the controllable photonic devices. The package may further include a first electronic die mounted on the PIC and coupled to the first plurality of TSVs or the second plurality of TSVs.

A light receiving device includes a first light-receiving element and a second light-receiving element, each including a semiconductor substrate including a light receiving region, and a support substrate including a supporting surface supporting the first light-receiving element and the second light-receiving element. The semiconductor substrate of the first or second light-receiving element includes a main surface including the light receiving region, a back surface on an opposite side of the main surface in a perpendicular direction, and a recess sunk from the back surface towards the main surface. The other semiconductor substrate of the first light-receiving element or second light-receiving element is disposed inside the recess. An angle formed between a side surface of the recess and the supporting surface is 75 or greater and 105 or less, where the side surface is continuous from an opening edge of the recess to a bottom surface of the recess.

A light receiving device includes a first light-receiving element and a second light-receiving element, each including a semiconductor substrate including a light receiving region, and a support substrate including a supporting surface supporting the first light-receiving element and the second light-receiving element. The semiconductor substrate of the first or second light-receiving element includes a main surface including the light receiving region, a back surface on an opposite side of the main surface in a perpendicular direction, and a recess sunk from the back surface towards the main surface. The other semiconductor substrate of the first light-receiving element or second light-receiving element is disposed inside the recess. An angle formed between a side surface of the recess and the supporting surface is 75 or greater and 105 or less, where the side surface is continuous from an opening edge of the recess to a bottom surface of the recess.

A display device may include first to third semiconductor light-emitting devices in each of a plurality of pixels, a sensing element, and a circuit block in each of the plurality of pixels. The sensing element may include a fourth semiconductor light-emitting device. The first to third semiconductor light-emitting devices may emit light during the first section by a power source having a forward bias. The fourth semiconductor light-emitting device may be light-received by a power source having a reverse bias.

A display device may include first to third semiconductor light-emitting devices in each of a plurality of pixels, a sensing element, and a circuit block in each of the plurality of pixels. The sensing element may include a fourth semiconductor light-emitting device. The first to third semiconductor light-emitting devices may emit light during the first section by a power source having a forward bias. The fourth semiconductor light-emitting device may be light-received by a power source having a reverse bias.

A treatment sensing device includes a substrate, a diode, a first transistor and a second transistor. The diode is disposed on the substrate and includes a first end. The first transistor is disposed on the substrate and includes a first end and a second end, wherein the first end of the first transistor is electrically connected to the first end of the diode. The second transistor is disposed on the substrate and includes a first end and a second end, wherein the first end of the second transistor is electrically connected to the first end of the diode. When the diode is in a light-emitting mode, the second end of the first transistor provides a positive voltage to the diode. When the diode is in the sensing mode, the second end of the second transistor provides a ground voltage or a negative voltage to the diode.

A treatment sensing device includes a substrate, a diode, a first transistor and a second transistor. The diode is disposed on the substrate and includes a first end. The first transistor is disposed on the substrate and includes a first end and a second end, wherein the first end of the first transistor is electrically connected to the first end of the diode. The second transistor is disposed on the substrate and includes a first end and a second end, wherein the first end of the second transistor is electrically connected to the first end of the diode. When the diode is in a light-emitting mode, the second end of the first transistor provides a positive voltage to the diode. When the diode is in the sensing mode, the second end of the second transistor provides a ground voltage or a negative voltage to the diode.

Embodiments disclosed herein include optical communication modules and optoelectronic packages. In an embodiment, an optical communication module comprises a substrate, a transistor over the substrate, an array of micro light emitting diodes (LEDs) over the transistor, and a connector over the array of micro LEDs.

Embodiments disclosed herein include optical communication modules and optoelectronic packages. In an embodiment, an optical communication module comprises a substrate, a transistor over the substrate, an array of micro light emitting diodes (LEDs) over the transistor, and a connector over the array of micro LEDs.

A vapor cell comprises: a main glass body section comprising wall(s) surrounding a cavity, the wall(s) having first interior surface(s) having first glass structures extending into and/or away from the cavity; a top glass lid positioned on top of and attached to the main glass body section, the top glass lid having second interior surface(s) having second glass structures extending into and/or away from the cavity; a bottom glass lid positioned below and attached to the main glass body section, the bottom glass lid having third interior surface(s) having third glass structures extending into and/or away from the cavity; and wherein the first glass structures, the second glass structures, and the third glass structures are configured to tune an index of refraction of the vapor cell to reduce RF signal scattering within the vapor cell.