A method of manufacturing a semiconductor device is provided, including: forming a first conductive type lightly doped region in the epitaxial layer; forming a first conductive type heavily doped region and a second conductive type heavily doped region in the epitaxial layer on the first conductive type lightly doped region, in which the neighboring first conductive type heavily doped regions are spaced apart by the second conductive type heavily doped region; disposing the mask on the second conductive type heavily doped region; disposing a spacer on a sidewall of the mask; doping a first conductive type dopant in the first conductive type lightly doped region to form an anti-breakdown region; removing the mask and forming a trench extending into the second conductive type heavily doped region, first conductive type lightly doped region and the epitaxial layer; and removing the spacer.

A display device may include first to third semiconductor light-emitting devices in each of a plurality of pixels, a sensing element, and a circuit block in each of the plurality of pixels. The sensing element may include a fourth semiconductor light-emitting device. The first to third semiconductor light-emitting devices may emit light during the first section by a power source having a forward bias. The fourth semiconductor light-emitting device may be light-received by a power source having a reverse bias.

A display device may include first to third semiconductor light-emitting devices in each of a plurality of pixels, a sensing element, and a circuit block in each of the plurality of pixels. The sensing element may include a fourth semiconductor light-emitting device. The first to third semiconductor light-emitting devices may emit light during the first section by a power source having a forward bias. The fourth semiconductor light-emitting device may be light-received by a power source having a reverse bias.

A neutron detector for detecting neutrons with energies from meV to tens of MeV comprising one or more nitride (BN) strips electrically connected in parallel or series. In some embodiments, the two or more BN strips are stacked on one another. In other embodiments, the two or more BN strips are disposed on a substrate with a gap between the two or more BN strips.

A neutron detector for detecting neutrons with energies from meV to tens of MeV comprising one or more nitride (BN) strips electrically connected in parallel or series. In some embodiments, the two or more BN strips are stacked on one another. In other embodiments, the two or more BN strips are disposed on a substrate with a gap between the two or more BN strips.

An electronic circuit module is an electronic circuit module mounted on a motherboard having a power supply source. The electronic circuit module includes a photoelectric conversion unit which performs conversion between an optical signal and an electric signal, a processor unit which performs computational processing by using an electric signal, a power conversion unit which converts power from the power supply source and which supplies power to the photoelectric conversion unit and the processor unit, and a package substrate on which the photoelectric conversion unit, the processor unit, and the power conversion unit are mounted. The photoelectric conversion unit, the processor unit, and the power conversion unit are connected only through a conductor pattern formed on/in the package substrate.

An electronic circuit module is an electronic circuit module mounted on a motherboard having a power supply source. The electronic circuit module includes a photoelectric conversion unit which performs conversion between an optical signal and an electric signal, a processor unit which performs computational processing by using an electric signal, a power conversion unit which converts power from the power supply source and which supplies power to the photoelectric conversion unit and the processor unit, and a package substrate on which the photoelectric conversion unit, the processor unit, and the power conversion unit are mounted. The photoelectric conversion unit, the processor unit, and the power conversion unit are connected only through a conductor pattern formed on/in the package substrate.

Provided are a photoelectric conversion element and a photoelectric conversion device that are thin, have high conversion efficiency, and allow device scale-up. The photoelectric conversion element includes a photoelectric conversion member containing a transition metal dichalcogenide, and a first electrode and a second electrode that are connected to the photoelectric conversion member, in which the first electrode and the second electrode include facing portions where at least a part of the first electrode and at least a part of the second electrode are arranged to face each other in a parallel manner, and a length W of each of the facing portions and a separation distance Lch between the first electrode and the second electrode at the facing portions satisfy a relationship of W/Lch36.7. The photoelectric conversion device includes the photoelectric conversion element.

Provided are a photoelectric conversion element and a photoelectric conversion device that are thin, have high conversion efficiency, and allow device scale-up. The photoelectric conversion element includes a photoelectric conversion member containing a transition metal dichalcogenide, and a first electrode and a second electrode that are connected to the photoelectric conversion member, in which the first electrode and the second electrode include facing portions where at least a part of the first electrode and at least a part of the second electrode are arranged to face each other in a parallel manner, and a length W of each of the facing portions and a separation distance Lch between the first electrode and the second electrode at the facing portions satisfy a relationship of W/Lch36.7. The photoelectric conversion device includes the photoelectric conversion element.

Described herein are electronic-photonic packages including photonic integrated circuits (PIC) that are assembled using hybrid bonding techniques and that communicate with external electronic dies using through silicon vias (TSVs). PICs of the types described herein may be used to support optical-domain communication between electronic devices, whether in the form of inter-chip communication or intra-chip communication. A package may include a PIC comprising a photonic layer comprising a plurality of controllable photonic devices and a first plurality of TSVs, and an electronic layer hybrid-bonded to the photonic layer, the electronic layer comprising a second plurality of TSVs coupled to the first plurality of TSVs, and electronic circuitry configured to control the controllable photonic devices. The package may further include a first electronic die mounted on the PIC and coupled to the first plurality of TSVs or the second plurality of TSVs.