A sensor chip package structure and a manufacturing method thereof are provided. The sensor chip package structure includes a substrate, a sensor chip and a wiring layer. The sensor chip is mounted on the substrate and has a top surface and a concave portion concaved from the top surface. The sensor chip has an active region formed on the top surface and the concave portion is located at one side of the active region. The concave portion has a depth of 100 m to 400 m. The wiring layer is disposed on the sensor chip and electrically connected to the active region. At least a portion of the wiring layer extends from the active region along a sidewall of the concave portion to a bottom surface of the concave portion.

Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunnelling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLDE coupled to the photodetector.

The present invention provides a package structure of an optical apparatus which includes a substrate, a light emitting device, a light sensing device, and a light barrier member. The light emitting device is disposed on the substrate and electrically connected to the substrate. The light emitting device is for emitting light. The light sensing device is disposed on the substrate and is a chip scale package (CSP) device. The light sensing device is for receiving light reflected by an object. The light barrier member is disposed around a periphery of the light sensing device.

A fingerprint sensing device includes an insulating package, an image-sensing die, a light-emitting element, and a conductive component. The insulating package has a bottom surface and a top surface formed with first and second recesses. The image-sensing die is disposed in the first recess and has an outer surface exposed therefrom. The light-emitting element is disposed in the second recess and has an outer surface exposed from the second recess, and an electrode unit. The conductive component is formed in the insulating package, has top and bottom ends exposed from the top and bottom surfaces of the insulating package, and is electrically coupled to the image-sensing die and the electrode unit.

The present invention provides a package structure of an optical apparatus which includes a substrate, a light emitting device, a light sensing device, and a light barrier member. The light emitting device is disposed on the substrate and electrically connected to the substrate. The light emitting device is for emitting light. The light sensing device is disposed on the substrate and is a chip scale package (CSP) device. The light sensing device is for receiving light reflected by an object. The light barrier member is disposed around a periphery of the light sensing device.

A sensor chip package structure and a manufacturing method thereof are provided. The sensor chip package structure includes a substrate, a sensor chip and a wiring layer. The sensor chip is mounted on the substrate and has a top surface and a concave portion concaved from the top surface. The sensor chip has an active region formed on the top surface and the concave portion is located at one side of the active region. The concave portion has a depth of 100 m to 400 m. The wiring layer is disposed on the sensor chip and electrically connected to the active region. At least a portion of the wiring layer extends from the active region along a sidewall of the concave portion to a bottom surface of the concave portion.

A portable electronic device includes a foldable housing; a display; an illuminance sensor; a state detection sensor; a memory; and a processor. Based on data received from the state detection sensor, the portable electronic device is recognized to be in the folded state. Responsive to the portable electronic device being in a calibration trigger state which includes the folded state, a first image is displayed in a sensor area of a first display area located on the illuminance sensor, and a second image is displayed in an area of the second display area facing the sensor area. An illuminance value is calculated based on data received from the illuminance sensor while the first image and the second image are displayed, and then compared to a reference value stored in the memory to calculate a calibration value for calibrating measured illuminance values of the illuminance sensor.