The present invention provides an optical semiconductor device for improving minimization and increase of detection precision. An optical semiconductor device A1 of the present invention includes: a substrate 1, including a semiconductor material, and including a main surface 111 and a back surface 112; a semiconductor light-emitting element 7A at the substrate; a semiconductor light-receiving element 7B at the substrate; a conductive layer 3, conducting the semiconductor light-emitting element 7A and the semiconductor light-receiving element 7B; and an insulating layer 2 between at least a portion of the conductive layer 3 and the substrate; wherein the substrate 1 includes a recess 14 recessed from the main surface 111 and including a bottom surface 142A of a light-emitting side recess where the semiconductor light-emitting element 7A is disposed, and a bottom surface 142B of a light-receiving side recess where the semiconductor light-receiving element 7B is disposed; a light-emitting side transparent portion 18A for light from the semiconductor light-emitting element 7A to pass through the bottom surface 142A of the light-emitting side recess to the back surface 112; and a light-receiving side transparent portion 18B for light from the back surface 112 to pass through the bottom surface 142B of the light-receiving side recess to the semiconductor light-receiving element 7B.

The present disclosure relates to an optical sensor module, an optical sensing accessory, and an optical sensing device. An optical sensor module comprises a light source, a photodetector, and a substrate. The light source is configured to convert electric power into radiant energy and emit light to an object surface. The photodetector is configured to receive the light from an object surface and convert radiant energy into electrical current or voltage. An optical sensing accessory and an optical sensing device comprise the optical sensor module and other electronic modules to have further applications.

The invention relates to an optoelectronic light-emitting device (1), including: at least one light-emitting diode (40) having an emitting surface (44) adapted to emit so-called excitation luminous radiation; and a photoluminescent material (31) that coats the emitting surface (44), the photoluminescent material containing photoluminescent particles adapted to convert said excitation luminous radiation through the emitting surface (44) at least in part into so-called photoluminescence luminous radiation.

The optoelectronic device includes at least one photodiode (50) adjacent the light-emitting diode (40) having a receiving surface (54) coated by the photoluminescent material (31) and adapted to detect at least part of the excitation radiation and/or the photoluminescence radiation coming from the photoluminescent material (31) through the receiving surface.

In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

An optical sensor arrangement, in particular an optical proximity sensor arrangement comprises a three-dimensional integrated circuit further comprising a first layer comprising a light-emitting device, a second layer comprising a light-detector and a driver circuit. The driver circuit is electrically connected to the light-emitting device and to the light-detector to control the operation of the light-emitting device and the light-detector. A mold layer comprising a first light-barrier between the light-emitting device and the light-detector configured to block light from being transmitted directly from the light-emitting device to the light-detector.

The present application relates generally to light emitting diodes and photodetectors as well as their methods of manufacture and use. In one exemplary embodiment, an integrated device may include a substrate, a light emitting diode formed on the substrate, and a photodetector formed on the substrate. In another embodiment, a device may include a light emitting diode formed on a substrate, and the light emitting diode may act as both a solid state light and as an optical transmitter.

An integrally packaged optronic integrated circuit device including an integrated circuit die containing at least one of a radiation emitter and radiation receiver and having a transparent packaging layer overlying a surface of the die, the transparent packaging layer having an opaque coating adjacent to edges of the layer.

A detection system comprises a semiconductor layer for converting photons or particles into charge carriers and a light emitting layer for generating light from the charge carriers. This can be used for the detection of x-rays or charged particles. The semiconductor layer can include amorphous selenium (a-Se), GaAs, CdZnTe, CdTe or perovskite semiconductors. The light emitting layer might be an organic light emitting diode (OLED), GaAs AlGaAs, InGaAs or perovskite semiconductors. Other possibilities are CdTe or CdZnTe. In addition, useful methods to increase light outcoupling out of the light emission layer are described.

The invention concerns a hybrid multispectral device comprising a substrate having a first surface and a second surface, at least one first functional element having a first functional layer operable to detect or emit light of a first wavelength range, and at least one second functional element having a second functional layer operable to detect or emit light of a second wavelength range different from the first wavelength range. The first functional element is arranged on the first surface of the substrate, while the second functional element is arranged on the second surface of the substrate. The first functional element is arranged in a first lateral region of the multispectral device, and the second functional element is arranged in a second lateral region of the multispectral device. The first lateral region and the second lateral region are arranged laterally offset from each other such that the light of the second wavelength region reaches the second functional element or the light of the second wavelength region emitted from the second functional element exits the multispectral device on the first surface of the substrate without having passed through the first functional layer.