Systems, devices, and methods for optical sensing applications. An example multi-wavelength light emitter structure including a substrate; and a vertical structure over the substrate and extending vertically away from the substrate along an axis, the vertical structure comprising a first active region including one or more cascade stages of superlattices for light emission at a first wavelength; a second active region including one or more cascade stages of superlattices for light emission at a second wavelength different from the first wavelength, wherein the second active region is closer to the substrate than the first active region and spaced apart from the first active region; and an electrically conductive material along sidewalls of at least one of the first active region or the second active region.

The present technology relates to a light receiving device and a distance measurement system that enable light to be surely received by a reference pixel. A light receiving device includes a plurality of pixels each including a light receiving element having a light receiving surface, and a light emission source provided on an opposite side of the light receiving surface with respect to the light receiving element. The plurality of pixels includes a first pixel including a light shielding member provided between the light receiving element and the light emission source, and a second pixel including a light guiding unit that is configured to propagate a photon and is provided between the light receiving element and the light emission source. The present technology can be applied to a distance measurement system or the like that detects a distance to a subject in a depth direction, for example, for example.

A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor. The second electrode is transparent, so as to allow the transmission of a laser source towards the photo-absorbing nano-columns.

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

The present disclosure relates to an optical sensor module, an optical sensing accessory, and an optical sensing device. An optical sensor module comprises a light source, a photodetector, and a substrate. The light source is configured to convert electric power into radiant energy and emit light to an object surface. The photodetector is configured to receive the light from an object surface and convert radiant energy into electrical current or voltage. An optical sensing accessory and an optical sensing device comprise the optical sensor module and other electronic modules to have further applications.

After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector.

A programmable integrated circuit (IC) comprising a single body of semiconductor is disclosed. The IC comprises at least one optical transducer as an integral part of the programmable integrated circuit on the same body of semiconductor, the optical transducer being operable to receive an optical input indicative of programming instructions and at least one storage element communicatively coupled to the optical transducer and being operable to store thereon the programming instructions or an adaptation thereof. The programming instructions received via the optical input are configured to direct the operation of the IC.

An electronic device includes a light source, a light receiver, a first light guide structure, and a second light guide structure. The first light guide structure faces a light emitting surface of the light source and faces a lateral wall of the light receiver. The second light guide structure is disposed over the light receiver and coupled to the first light guide structure. The light receiver and the second light guide structure defines a cavity between the light receiver and the second light guide structure.

A photovoltaic device and display equipment are provided. The photovoltaic device includes at least one photoelectric conversion sheet and a light guide plate, the at least one photoelectric conversion sheet arranged at a light exiting face side of the light guide plate.