An optical transconductance varistor system having a modulated radiation source configured to provide modulated stimulus, a wavelength converter operably connected to the modulated radiation source to produce a modulated stimulus having a predetermined wavelength, and a wide bandgap semiconductor photoconductive material in contact between two electrodes. The photoconductive material is operably coupled, such as by a beam transport module, to receive the modulated stimulus having the predetermined wavelength to control a current flowing through the photoconductive material when a voltage potential is present across the electrodes.

An optical transconductance varistor system having a modulated radiation source configured to provide modulated stimulus, a wavelength converter operably connected to the modulated radiation source to produce a modulated stimulus having a predetermined wavelength, and a wide bandgap semiconductor photoconductive material in contact between two electrodes. The photoconductive material is operably coupled, such as by a beam transport module, to receive the modulated stimulus having the predetermined wavelength to control a current flowing through the photoconductive material when a voltage potential is present across the electrodes.

An optical coupling device includes a light-emitting element, a light-receiving element that faces the light-emitting element, a lead frame that has a first surface on which the light-emitting element is provided and a second surface facing the first surface, a first covering material that covers the light-emitting element, a second covering material that covers the first covering material, the light-receiving element, and the lead frame, and a third covering material that covers the second covering material. At least one of first bonding strength between the second covering material and the third covering material and second bonding strength between the second covering material and the second surface is lower than third bonding strength between the first covering material and the second covering material.

A photoelectric conversion device includes a first photoelectric conversion portion configured to generate electrons; a second photoelectric conversion portion configured to generate holes; a charge-to-voltage conversion portion including an n-type first semiconductor region configured to collect the generated electrons and a p-type second semiconductor region configured to collect the generated holes, the charge-to-voltage conversion portion being configured to convert a charge that is based on the electrons and the holes to a voltage; and a signal generation portion configured to generate a signal corresponding to the voltage, the signal generation portion including an amplification transistor.

A semiconductor relay includes at least a housing, a first input terminal, a second input terminal, a first output terminal, a second output terminal, a light emitting element, a light receiving element, a first MOSFET, and a second MOSFET. The light emitting element is disposed on a first principal surface of a first base, and a light receiving drive element is disposed on a second principal surface of a second base. A source electrode of the light receiving drive element and the second base are connected to each other with the same potential. The second base is disposed between the first MOSFET and the second MOSFET as viewed along a first axis. The normal to the first principal surface of the first base crosses the normal to the second principal surface of the second base.

A multi-level semiconductor device, the device comprising: a first level comprising integrated circuits; a second level comprising at least one electromagnetic wave receiver, wherein said second level is disposed above said first level, wherein said integrated circuits comprise single crystal transistors; and an oxide layer disposed between said first level and said second level, wherein said device comprises at least one read out circuit, wherein said second level is bonded to said oxide layer, and wherein said bonded comprises oxide to oxide bonds.

Disclosed in the present invention is a short-range optical potentiometer module, comprising a potential base body provided with a key slot, and a potential key which is mounted inside the key slot and can be displaced up and down, wherein a reset member for resetting the potential key is also arranged inside the key slot, an optical pair transistor composed of a photosensitive element and a light-emitting element is arranged inside the potential key, the optical pair transistor can be displaced up and down along with the potential key, a key base is internally provided with a fixed grating corresponding to the optical pair transistor, the reset member is sleeved on the grating, and the grating is configured such that the flux of light received by the photosensitive element from the light-emitting element changes along with the up-and-down displacement of the potential key, thereby causing an electrical signal generated by the photosensitive element to change along with the displacement of the potential key. The module of the solution uses non-contact photoelectric elements, thereby greatly increasing the service life; when the change in flux of light at the same distance is adjusted, the overall height of the module is close to or the same as the height of a potential base body; and the module has a skillful overall structure layout, can be conveniently assembled and replaced, and has strong practicality.

An optical coupling device includes a leadframe, a light-emitter, a light-receiver, and first to fourth resins. The light-emitter is located on the leadframe. The first resin is located on the leadframe. The first resin includes first and second portions. The first portion surrounds the light-emitter. The second portion is positioned between the first portion and the light-emitter. A first thickness of the first portion is greater than a second thickness of the second portion. The second resin is located between the light-emitter and the light-receiver in the first direction and is light-transmissive. The third resin is located between the second resin and the light-receiver and is light-transmissive. The fourth resin houses the light-emitter, the light-receiver, and the first to third resins and is light-shielding.