A packaging structure, a preparation method, and a camera module are provided. The packaging structure includes a substrate module, and a light emitting unit and a light receiving unit located on the substrate of the substrate module. The substrate module defines first channels and second channels. Two ends of each first channel extend to the substrate and the non-photosensitive area of the light receiving unit, respectively. A first conductive layer is formed on an inner wall of each first channel to form a first hollow conductive channel, which is electrically connected to the substrate and the non-photosensitive area. Two ends of each second channel extend to the substrate and the light emitting unit, respectively. A second conductive layer is formed on an inner wall of each second channel to form a second hollow conductive channel, which is electrically connected to the substrate and the light emitting unit.

A packaging structure, a preparation method, and a camera module are provided. The packaging structure includes a substrate module, and a light emitting unit and a light receiving unit located on the substrate of the substrate module. The substrate module defines first channels and second channels. Two ends of each first channel extend to the substrate and the non-photosensitive area of the light receiving unit, respectively. A first conductive layer is formed on an inner wall of each first channel to form a first hollow conductive channel, which is electrically connected to the substrate and the non-photosensitive area. Two ends of each second channel extend to the substrate and the light emitting unit, respectively. A second conductive layer is formed on an inner wall of each second channel to form a second hollow conductive channel, which is electrically connected to the substrate and the light emitting unit.

An optical semiconductor element includes a substrate and a plurality of cells. Each cell includes an optical layer, a first semiconductor layer, and a second semiconductor layer. The plurality of cells include a first cell and a second cell. The second semiconductor layer of the first cell and the first semiconductor layer of the second cell are electrically connected to each other by a first connection portion of a first wiring portion. The first wiring portion has a first extending portion that extends from the first connection portion so as to surround four side portions of the optical layer of the first cell. The optical layer is an active layer that generates light having a central wavelength of 3 m or more and 10 m or less or an absorption layer having a maximum sensitivity wavelength of 3 m or more and 10 m or less.

To improve the measurement accuracy. The present technology provides a light receiving device (1) including: a light transmitting part (11) that transmits emitted light emitted from a light emitting device; a light receiver (12) that receives incident light from outside; and a semiconductor substrate (13), in which a non-sensitive region (14) that does not sense light is formed between the light transmitting part (11) and the light receiver (12). Moreover, the present technology provides a manufacturing method for a light receiving device (1) including: stacking a light receiver (12) on one surface of a semiconductor substrate (13); etching a side on which the light receiver (12) is disposed into a ring shape; fixing the semiconductor substrate (13) to a permanent fixing substrate; etching an outer periphery and substantially a center portion of the light receiver (12); and removing the semiconductor substrate (13) from the permanent fixing substrate by laser lift off.

A semiconductor device includes a substrate, a passivation layer and an optical element. The substrate includes a surface and a sidewall. The passivation layer is disposed on the surface of the substrate. The optical element is disposed in the substrate and exposed from the sidewall of the substrate. The sidewall of the substrate is inclined towards the surface of the substrate at an angle of approximately 87 degrees to approximately 89 degrees.

The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

MicroLEDs may be used in providing intra-chip optical communications and/or inter-chip optical communications, for example within a multi-chip module or semiconductor package containing multiple integrated circuit semiconductor chips. In some embodiments the integrated circuit semiconductor chips may be distributed across different shelves in a rack. The optical interconnections may make use of optical couplings, for example in the form of lens(es) and/or mirrors. In some embodiments arrays of microLEDs and arrays of photodetectors are used in providing parallel links, which in some embodiments are duplex links.

MicroLEDs may be used in providing intra-chip optical communications and/or inter-chip optical communications, for example within a multi-chip module or semiconductor package containing multiple integrated circuit semiconductor chips. In some embodiments the integrated circuit semiconductor chips may be distributed across different shelves in a rack. The optical interconnections may make use of optical couplings, for example in the form of lens(es) and/or mirrors. In some embodiments arrays of microLEDs and arrays of photodetectors are used in providing parallel links, which in some embodiments are duplex links.

The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region (3) embedded between two layer sequences (1, 2) and further comprises a photodetector arranged to measure an intensity of an optical field resonating in said laser. The photodetector is a phototransistor composed of an emitter layer (e), a collector layer (c) and a base layer (b), each of which being a bulk layer and forming part of one of said layer sequences (1, 2). With the proposed semiconductor laser an optical module based on this laser can be manufactured more easily, at lower costs and in a smaller size than known modules.

In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.