The present disclosure relates to an optical sensor module, an optical sensing accessory, and an optical sensing device. An optical sensor module comprises a light source, a photodetector, and a substrate. The light source is configured to convert electric power into radiant energy and emit light to an object surface. The photodetector is configured to receive the light from an object surface and convert radiant energy into electrical current or voltage. An optical sensing accessory and an optical sensing device comprise the optical sensor module and other electronic modules to have further applications.

A light receiving and emitting element module includes a substrate; a light emitting element and a light receiving element on an upper surface of the substrate; a frame-shaped outer wall that on the upper surface of the substrate; and a light shielding wall that is positioned inside the outer wall and partitions an internal space of the outer wall into spaces respectively corresponding to the light emitting element and the light receiving element. The light shielding wall includes a light emitting element-side shading surface on the light emitting element side, a light receiving element-side shading surface on the light receiving element side, and a lower surface that is connected to each of the light emitting element-side shading surface and the light receiving element-side shading surface, and that faces the substrate. The lower surface has an inclined surface inclined with respect to the upper surface of the substrate.

After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector.

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.

An optical apparatus includes a substrate 1, a wiring pattern 8 formed on the substrate 1, a light-receiving element 3 and a light-emitting element 2 provided on the substrate 1 and spaced apart from each other in a direction x, a light-transmitting resin 4 covering the light-receiving element 3, a light-transmitting resin 5 covering the light-emitting element 2, and a light-shielding resin 6 covering the light-transmitting resin 4 and the light-transmitting resin 5. The wiring pattern 8 includes a first light-blocking portion 83 interposed between the light-shielding resin 6 and the substrate 1 and positioned between the light-receiving element 3 and the light-emitting element 2 as viewed in x-y plane. The first light-blocking portion 83 extends across the light-emitting element 2 as viewed in the direction x.

A method for fabricating semiconductor-based sensor devices and such a sensor device are described. The sensor devices comprise sensors comprising micro- and/or nanostructures which are in communication with the environment surrounding the sensor devices. The method comprises the steps of providing a semiconductor-based device wafer, fabricating a plurality of sensors on the semiconductor-based device wafer (1), providing (102) a capping wafer, attaching a first side of the capping wafer on the device wafer with each sensor arranged below a recess. The capping wafer comprises, between the recesses, a plurality of holes extending from the second side, wherein the holes are in fluid communication with the cavities by passages arranged between contact areas when the capping wafer has been attached to the device wafer. The method comprises the steps of injecting a liquid into the passages and the holes, forming, from the liquid, a gas permeable segment in the passages, and dividing the device wafer and the attached capping wafer into individual devices along lines through the holes.

An electronic device includes a light source, a light receiver, a first light guide structure, and a second light guide structure. The first light guide structure faces a light emitting surface of the light source and faces a lateral wall of the light receiver. The second light guide structure is disposed over the light receiver and coupled to the first light guide structure. The light receiver and the second light guide structure defines a cavity between the light receiver and the second light guide structure.

A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. The electrical and optical coupling includes triggering emission of radiation by the auxiliary semiconductor device and triggering avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device.

This invention relates to an optical module package structure. A substrate is defined with a light receiving region and a light emitting region. A light receiving chip and a light emitting chip are disposed on the light receiving region and the light emitting region of the substrate, respectively. An electronic unit is disposed on the substrate and electrically connected to the light emitting chip. Two encapsulating gels are coated on each of the chips and the electronic unit. A cover is disposed on the substrate and has a light emitting hole and a light receiving hole, located above the light emitting chip and the light receiving chip, respectively. In this way, the package structure of the optical module of the present invention integrates passive components, functional ICs or dies into a module, and the optical module provides the functions of current limiting or function adjustment.