A sensor package includes an encapsulation body formed from a mold compound having a front side and a back side opposite the front side, an optical sensor die embedded within the encapsulation body on the front side such that an active surface of the optical sensor die is uncovered by the encapsulation body, and a conductive via that extends from the front side to the back side through the encapsulation body. The sensor package also includes a topside redistribution layer arranged on the front side, the topside redistribution layer electrically connecting the optical sensor die to the conductive via, a connection element arranged on the back side for electrically connecting the sensor package to an integrated circuit device, and a backside redistribution layer arranged on the back side. The backside redistribution layer electrically connects the connection element to the conductive via.

A device includes an optical integrated circuit device mounted over an upper surface of a support substrate. The optical integrated circuit device includes an optical sensor array supported by a semiconductor substrate made of a first semiconductor material. A discrete semiconductor block, made of a second semiconductor material, is mounted over an upper surface of the optical integrated circuit device adjacent the optical sensor array. The first and second semiconductor materials have substantially matched coefficients of thermal expansion. A parallelpipedal-shaped optical filter is mounted over an upper surface of the discrete semiconductor block and extends over the optical sensor array. One or more edges/corners of the parallelpipedal-shaped optical filter cantilever over the optical sensor array without any provided support.

An isolation system and isolation device are disclosed. An illustrative isolation device is disclosed to include a transmitter circuit to generate a first current in accordance with a first signal, a first elongated conducting element to generate a magnetic field when the first current flows through the first elongated conducting element, a second elongated conducting element adjacent to the first elongated conducting element so as to receive the magnetic field. The second elongated conducting element is configured to generate an induced current when the magnetic field is received. The receiver circuit is configured to receive the induced current as an input, and configured to generate a reproduced first signal as an output of the receiver circuit.

Provided are optical transformer devices having a high power efficiency. The device architecture provides uniform current spreading to minimize efficiency droop. The quantum well designs are optimized for both light-emitting diode (LED) and photo diode (PD) operation. A low-loss optical cavity allows efficient transfer of light from the LED junction to the PD junction. The architecture provides a low-loss voltage up- and down-conversion and provides compatibility with production-grade epitaxial growth and wafer fabrication processes.

MicroLEDs may be used in providing intra-chip optical communications and/or inter-chip optical communications, for example within a multi-chip module or semiconductor package containing multiple integrated circuit semiconductor chips. In some embodiments the integrated circuit semiconductor chips may be distributed across different shelves in a rack. The optical interconnections may make use of optical couplings, for example in the form of lens(es) and/or mirrors. In some embodiments arrays of microLEDs and arrays of photodetectors are used in providing parallel links, which in some embodiments are duplex links.

A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.

In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

An optical apparatus includes a substrate 1, a wiring pattern 8 formed on the substrate 1, a light-receiving element 3 and a light-emitting element 2 provided on the substrate 1 and spaced apart from each other in a direction x, a light-transmitting resin 4 covering the light-receiving element 3, a light-transmitting resin 5 covering the light-emitting element 2, and a light-shielding resin 6 covering the light-transmitting resin 4 and the light-transmitting resin 5. The wiring pattern 8 includes a first light-blocking portion 83 interposed between the light-shielding resin 6 and the substrate 1 and positioned between the light-receiving element 3 and the light-emitting element 2 as viewed in x-y plane. The first light-blocking portion 83 extends across the light-emitting element 2 as viewed in the direction x.

Embodiments are directed to a coupler system having an interposer configured to couple optical signals. The interposer includes at least one optoelectronic component formed on a glass substrate. The interposer further includes at least one waveguide formed on the glass substrate and configured to couple the optical signals to or from the at least one optoelectronic component, wherein the at least one waveguide comprises a waveguide material having grain diameters greater than about one micron and an optical loss less than about one decibel per centimeter of optical propagation.

Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.