A method of manufacturing optoelectronic devices, including the following successive steps: a) forming, by epitaxial growth on a growth substrate, an active diode stack; b) transferring, onto a first transfer substrate, the active diode stack; c) removing the growth substrate; d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies; and e) transferring, onto a second transfer substrate, the dies, each comprising a portion of the active diode stack.

The present invention is a method for producing a bonded light-emitting device wafer, in which a light-emitting device structure, to be a micro LED, and a to-be-bonded substrate are bonded with each other via an adhesive, the method includes the steps of bonding the light-emitting device structure to the to-be-bonded substrate via the adhesive to obtain a bonded wafer, producing a map data for removal by optically investigating a failure portion of the bonded wafer, and irradiating the failure portion of the bonded wafer with the laser light for removal from the to-be-bonded substrate based on the map data for removal, causing a portion of the adhesive which is included in the failure portion to absorb the laser light for removal and causing the portion of the adhesive which is included in the failure portion to sublimate, thereby removing the portion of the light-emitting device structure which is included in the failure portion to obtain the bonded light-emitting device wafer. This can provide the method for producing a bonded light-emitting device wafer capable of selectively removing the failure portion of the light-emitting device structure and producing the bonded light-emitting device wafer.

A semiconductor device is provided, which includes an epitaxial structure, a first electrode, an insulating structure, a stop layer, and a second electrode. The epitaxial structure includes a first semiconductor layer, a second semiconductor layer and an active region located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first portion and a second portion. The first portion has a first side surface. The first electrode is located under the first semiconductor layer. The insulating structure distributed on the first side surface and having an opening which corresponds to the first electrode. The stop layer contacts the insulating structure distributed on the first side surface. The second electrode is located on the second semiconductor layer. The first portion has a first width, and the second portion has a second width less than the first width.

A light emitting device including a protection layer including a first area and a second area having a greater thickness than the first area, a light emitting stacked structure including a plurality of semiconductor layers sequentially disposed one over another along a first direction on the first area of the protection layer, a plurality of via patterns electrically connected to the light emitting stacked structure and having a length along the first direction, and a plurality of pads electrically connected to the light emitting stacked structure through the via patterns, respectively, in which the second area of the protection layer does not overlap the light emitting stacked structure, and at least portion of the pads overlaps the second area of the protection layer and one of the via patterns.

A display device including a display area and a non-display area formed around the display area comprises a substrate, a pixel circuit layer disposed on the substrate, and including a plurality of sub-pixel circuits disposed in the display area, a plurality of first conductive connectors disposed on the pixel circuit layer, and a display element layer disposed on the first conductive connectors. The display element layer may include a plurality of light emitting elements disposed in the display area, electrically connected to the sub-pixel circuits through the first conductive connectors disposed in the display area and configured to emit light in response to signals applied from the sub-pixel circuits, and a plurality of dummy light emitting elements disposed in the non-display area. The light emitting elements and the dummy light emitting elements may include a same material.

The present invention relates to an epitaxial die and a chip die for a semiconductor light-emitting device, and a manufacturing method thereof, wherein only one of two electrodes is exposed to the outside, and a process of forming a positive ohmic contact electrode (p-ohmic contact electrode) or a negative ohmic contact electrode (n-ohmic contact electrode) is completed in an epitaxial die manufacturing step so as to achieve dramatic thickness reduction and easy reduction of the chip die size, thereby improving the light output.

A method of manufacturing a light-emitting diode device comprises fabricating a light-emitting diode structure comprising an inorganic semiconductor; and fabricating an optic over the light-emitting diode structure using nano-imprint lithography. The method may further comprise, before fabricating the optic, forming a first lens on the light-emitting diode structure by thermal reflow lithography. The optic and first lens may improve the efficiency of the light-emitting diode device by reducing losses due to total internal reflection. Also provided are light emitting diode devices obtainable by the method.

A light emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a p-type dopant, an active layer disposed between the first semiconductor layer and the second semiconductor layer, an electrode layer disposed on the second semiconductor layer, and an insulating film surrounding at least a side surface of the active layer. The first semiconductor layer has a diameter in a range of about 0.5 m to about 10 m, and the light emitting element has an external quantum efficiency greater than or equal to about 23%.

A method of manufacturing a light emitting device includes: providing a structure including: a first substrate, a plurality of light emitting parts arranged apart from one another on an upper surface of the first substrate, a metal layer disposed on an upper surface side of the first substrate and covering at least the light emitting parts, and a protective member covering the metal layer; bonding a second substrate to the protective member; exposing the lower surfaces of the light emitting parts by removing the first substrate; bonding a light transmissive member to the lower surfaces of the light emitting parts via a bonding member; removing the second substrate; creating exposed portions of the light transmissive member; removing the metal layer; and dividing the light transmissive member into individual pieces at the exposed portions.

A mask member, a light emitting element transfer device, and a transfer method are provided. A mask member includes a first mask including a light blocking pattern layer and a base layer, wherein the light blocking pattern layer of the first mask includes a plurality of opening patterns, and a second mask including a light blocking pattern layer and a base layer, wherein the light blocking pattern layer of the second mask includes a plurality of opening patterns disposed at angles relative to a center of the second mask. The mask member defining a transfer area by overlapping an opening pattern of the plurality of opening patterns of the first mask and an opening pattern of the plurality of opening patterns of the second mask.