In one aspect, there is provided an apparatus including a light emitting diode. The apparatus may include a plurality of layers including a substrate layer, a buffer layer disposed on the substrate layer, a charge transport layer, a light emission layer, another charge transport layer, and/or a metamaterial layer. The other charge transport layer may have at least one channel etched into the other charge transport layer leaving a residual thickness of the other charge transport layer between a bottom of the etched channel and the light emission layer. A metamaterial layer may be contained in the at least one channel that is proximate to the residual thickness of the charge transport layer. The metamaterial may include a structure including at least one of a dielectric or a metal. The metamaterial may cause the light emitting diode to operate at higher frequencies and with higher efficiency.

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

A wavelength-converting material and an application thereof are provided. The wavelength-converting material includes an all-inorganic perovskite quantum dot having a chemical formula of CsPb(Cl.sub.aBr.sub.1-a-bI.sub.b).sub.3, wherein 0a1, 0b1.

Provided is a biosensor. The biosensor includes a substrate, an optical structure provided on the substrate, and a cover provided on the substrate and having a bridge shape that is in contact with a top surface of the substrate at both sides of the optical structure. The cover has a channel extending in a first direction, the optical structure is provided inside the channel, and the optical structure is configured to capture biomaterials that travel through the channel.

Various embodiments of optical metalens and electronic displays using metalenses are described herein. In some embodiments, a metalens includes an array of passive deflector elements with varying diameters that extend from a substrate with a repeating pattern of deflector element diameters. Interelement on-center spacings of the passive deflector elements may be selected as a function of an operational wavelength of the optical metalens. Each passive deflector element has a height and a width that are each less than a smallest wavelength within the operational bandwidth. An electronic display may include a multi-pixel light-emitting diode (LED) display, such as an RGB LED display. A metalens comprising a plurality of metalens subpixels may deflect the optical radiation from each corresponding LED subpixel at a target deflection angle. Each metalens subpixel may include a two-dimensional array of passive deflector elements in a repeating pattern of deflector element diameters.

A method for forming a pumped laser structure includes forming a III-V buffer layer on a substrate including one of Si or Ge; forming a light emitting diode (LED) on the buffer layer configured to produce a threshold pump power; forming a photonic crystal layer on the LED and depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonic crystal layer from the LED with an optical pump power greater than the threshold pump power, wherein the LED and the laser are formed monolithically and the LED functions as an optical pump for the laser.

A light emitting diode has a plurality of layers including at least two semiconductor layers. A first layer of the plurality of layers has a nanostructured surface which includes a quasi-periodic, anisotropic array of elongated ridge elements having a wave-ordered structure pattern, each ridge element having a wavelike cross-section and oriented substantially in a first direction.

Pixel locations in an addressable display are defined by metal landings on a top surface of a flexible substrate, such as by depositing a metal film and etching the film. The substrate surface may be hydrophobic so that the hydrophobic surface is exposed between the metal landings. The substrate has conductive vias that connect the metal landings to traces on a bottom surface of the substrate for connection to addressing circuitry. LED ink is then blanket-printed over the top surface and cured to electrically connect bottom electrodes of the LEDs to the metal landings. LEDs that fall between the landings are ineffective. A dielectric layer is blanket-printed which exposes the top electrodes, and a transparent conductor layer is blanket-printed over the LEDs to connect all LEDs associated with an individual pixel location in parallel. Accordingly, all printed steps can be performed without any alignment.

A semiconductor light emitting apparatus comprised of a semiconductor light emitting device (100) having a layered semiconductor layer (110) configured by layering at least two or more semiconductor layers (103), (105) and a light emitting layer (104) to emit first light, and a wavelength conversion member that covers at least apart of the semiconductor light emitting device (100), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device (100) is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (100), the fine structure layer forms a two-dimensional photonic crystal (102) controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional photonic crystal (102) has at least two or more periods each of 1 m or more.

The embodiment provides a display device including an array substrate, an opposite substrate, a plurality of micro light-emitting diodes and a plurality of bank structures. The opposite substrate is disposed opposite to the array substrate. The micro light-emitting diodes are arranged in an array on the array substrate, wherein the micro light-emitting diodes are electrically connected to the array substrate. The bank structures are located between the array substrate and the opposite substrate, wherein the bank structures form a plurality of accommodating regions, and one of the micro light-emitting diodes is located in one of the accommodating regions. A height of the bank structures is more than or equal to a height of the micro light-emitting diodes.