A light emitting element and a display device including the same are provided. The light emitting element includes: a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and an insulation layer surrounding an outer surface of the passivation layer, wherein the passivation layer includes a two-dimensional (2D) material.

A display device comprises a first substrate, a first power bottom line on the first substrate, a second substrate on the first power bottom line, the second substrate having a first power connection hole to expose the first power bottom line, and a pixel driving unit including a plurality of switching elements on the second substrate.

A light-emitting module includes a first terminal, a second terminal, a first light source, a second light source, and a third light source. The first light source is connected between the first terminal and the second terminal. The second light source and the third light source are connected between the first terminal and the second terminal, in anti-parallel with the first light source. The first, second, and third light sources are aligned in a first direction along a light-emitting surface, with the first light source between the second light source and the third light source.

An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 510.sup.19 atoms/cm.sup.3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

A display apparatus device including a panel substrate including a circuit, and a light module including light sources each including a light emitter, a connection line, a light transmission layer on the light emitter, and a light block layer on the light transmission layer, in which the light sources includes first to fourth light sources, a transmission layer of the first light source includes a first converter, a transmission layer of the fourth light source includes a second converter, the first converter includes a wavelength converter to convert a first primary light of the first light source into a red color range, the second converter converts a fourth primary light of the fourth light source into a white light, and a peak wavelength of a second primary light of the second light source is different from that of a third primary light of the third light source.

An optoelectronic light emitting device includes a substantially transparent first base body, a second base body arranged adjacent to the first base body, and an optoelectronic foil having a first region arranged on the first base body and a second region arranged on the second base body. The optoelectronic foil includes a flexible carrier substrate, at least one electrical line and a plurality of selectively controllable optoelectronic semiconductor components which are arranged on the carrier substrate. An at least partially transparent adhesive layer is arranged between the optoelectronic semiconductor components and the first or second base body and connects the optoelectronic foil to the first or second base body.

A light-emitting diode (LED) structure includes an active region that has at least one aluminum-containing quantum well (QW) stack that emits light from the LED structure when activated. The LED structure exhibits a modified internal quantum efficiency value, which is higher than a LED structure that does not include aluminum within a QW stack. The LED structure also exhibits a modified peak wavelength, which is longer than an unmodified peak wavelength of the unmodified LED structure.

Provided are a display base plate and a preparation method thereof and a display apparatus, belonging to the technical field of display devices. The display base plate comprises a substrate, and a light-emitting diode and a driving circuit which are patterned and arranged on one side of the substrate, and the light-emitting diode comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked; and the driving circuit is respectively connected with the first semiconductor layer and the second semiconductor layer, and is used for driving the light-emitting diode to emit light. By the display base plate and the preparation method thereof and the display apparatus provided by the embodiment of the application, the difficulty of integrating the driving circuit and the light-emitting diode in the display base plate can be reduced, so that a preparation process of the display base plate is simpler.

A display device includes a first substrate and a second substrate. The first substrate is a passive drive substrate. The first substrate includes a plurality of first light emitters arranged two dimensionally. The first light emitters are arranged at respective intersections of a plurality of data lines and a plurality of scan lines. The second substrate is a passive drive light transmissive substrate. The second substrate includes a plurality of second light emitters arranged two dimensionally. The second light emitters are arranged at respective intersections of the plurality of data lines and the plurality of scan lines. The second substrate is stacked over the first substrate, such that the second light emitters are provided at respective positions not overlapping with the first light emitters.

The invention relates to an illumination arrangement comprising a light-emitting optoelectronic element and an optical device for beam conversion of electromagnetic radiation generated by the light-emitting optoelectronic element. The light emitting optoelectronic element comprises a plurality of emission areas arranged in matrix form; and each emission region is associated with a main beam direction. At least a portion of the emission areas is arranged such that the centers of the emission areas lie on a curved surface.